Information card for entry 7109252

Structure parameters

• Formula: C59 H32 F8 N4
• Calculated formula: C59 H32 F8 N4
• SMILES: C12(c3cc(ccc3c3ccc(cc13)N(c1ccccc1)c1ccccc1)N(c1ccccc1)c1ccccc1)c1cc(ccc1c1ccc(cc21)c1c(c(nc(c1F)F)F)F)c1c(c(nc(c1F)F)F)F
• Title of publication: Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass
• Authors of publication: Evgeny Tatarov; Thomas Reichert; Tobat P. I. Saragi; Ayna Scheffler; Roman Ueberschaer; Clemens Bruhn; Thomas Fuhrmann-Lieker; Josef Salbeck
• Journal of publication: Chem.Commun.
• Year of publication: 2013
• Journal volume: 49
• Pages of publication: 4564
• a: 16.1222 ± 0.0009 Å
• b: 16.8188 ± 0.001 Å
• c: 17.5167 ± 0.001 Å
• α: 106.194 ± 0.004°
• β: 93.136 ± 0.005°
• γ: 90.734 ± 0.005°
• Cell volume: 4552.5 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0613
• Residual factor for significantly intense reflections: 0.0363
• Weighted residual factors for significantly intense reflections: 0.0794
• Weighted residual factors for all reflections included in the refinement: 0.0849
• Goodness-of-fit parameter for all reflections included in the refinement: 0.879
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No