Information card for entry 7109253

Structure parameters

• Formula: C35 H12 Br2 F8 N2
• Calculated formula: C35 H12 Br2 F8 N2
• SMILES: C12(c3cc(ccc3c3ccc(cc13)Br)Br)c1cc(ccc1c1ccc(cc21)c1c(c(F)nc(c1F)F)F)c1c(c(F)nc(c1F)F)F
• Title of publication: Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass
• Authors of publication: Evgeny Tatarov; Thomas Reichert; Tobat P. I. Saragi; Ayna Scheffler; Roman Ueberschaer; Clemens Bruhn; Thomas Fuhrmann-Lieker; Josef Salbeck
• Journal of publication: Chem.Commun.
• Year of publication: 2013
• Journal volume: 49
• Pages of publication: 4564
• a: 14.1657 ± 0.0006 Å
• b: 17.9898 ± 0.0006 Å
• c: 23.0292 ± 0.0008 Å
• α: 90°
• β: 90.717 ± 0.003°
• γ: 90°
• Cell volume: 5868.3 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0939
• Residual factor for significantly intense reflections: 0.0809
• Weighted residual factors for significantly intense reflections: 0.2164
• Weighted residual factors for all reflections included in the refinement: 0.2266
• Goodness-of-fit parameter for all reflections included in the refinement: 1
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No