Information card for entry 7126754

Structure parameters

• Formula: C52 H66 N8 Ni Si2
• Calculated formula: C52 H66 N8 Ni Si2
• Title of publication: Insertion of Ni(0) and Pd(0) precursors into the Si-Si bond of a disilane with two hypercoordinate silicon atoms.
• Authors of publication: Usui, Ryosuke; Sunada, Yusuke
• Journal of publication: Chemical communications (Cambridge, England)
• Year of publication: 2020
• Journal volume: 56
• Journal issue: 60
• Pages of publication: 8464 - 8467
• a: 17.514 ± 0.003 Å
• b: 11.9262 ± 0.0017 Å
• c: 23.97 ± 0.004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5006.7 ± 1.4 ų
• Cell temperature: 203 K
• Ambient diffraction temperature: 203 K
• Number of distinct elements: 5
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.108
• Residual factor for significantly intense reflections: 0.0629
• Weighted residual factors for significantly intense reflections: 0.1611
• Weighted residual factors for all reflections included in the refinement: 0.1904
• Goodness-of-fit parameter for all reflections included in the refinement: 0.999
• Diffraction radiation wavelength: 0.71075 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No