Information card for entry 7201439

Structure parameters

• Formula: C36 H42 S2 Si2
• Calculated formula: C36 H42 S2 Si2
• Title of publication: Thin-film morphology and transistor performance of alkyl-substituted triethylsilylethynyl anthradithiophenes
• Authors of publication: Anthony, John E.; Subramanian, Sankar; Parkin, Sean R.; Park, Sung Kyu; Jackson, Thomas N.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2009
• Journal volume: 19
• Journal issue: 42
• Pages of publication: 7984
• a: 7.1419 ± 0.0017 Å
• b: 10.321 ± 0.003 Å
• c: 11.24 ± 0.003 Å
• α: 83.808 ± 0.019°
• β: 89.24 ± 0.03°
• γ: 81.277 ± 0.014°
• Cell volume: 814.2 ± 0.4 ų
• Cell temperature: 90 ± 0.2 K
• Ambient diffraction temperature: 90 ± 0.2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0955
• Residual factor for significantly intense reflections: 0.0508
• Weighted residual factors for significantly intense reflections: 0.1238
• Weighted residual factors for all reflections included in the refinement: 0.1426
• Goodness-of-fit parameter for all reflections included in the refinement: 1.03
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No