Information card for entry 7203762

Structure parameters

• Formula: C H4 Cl In0.33 N2 O
• Calculated formula: C H4 Cl In0.333333 N2 O
• Title of publication: A simple single-source precursor route to the nanostructures of AlN, GaN and InN
• Authors of publication: Sardar, Kripasindhu; Dan, Meenakshi; Schwenzer, Birgit; Rao, C. N. R.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2005
• Journal volume: 15
• Journal issue: 22
• Pages of publication: 2175
• a: 13.9176 ± 0.0001 Å
• b: 13.9176 ± 0.0001 Å
• c: 13.9176 ± 0.0001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2695.83 ± 0.03 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 205
• Hermann-Mauguin space group symbol: P a -3
• Hall space group symbol: -P 2ac 2ab 3
• Residual factor for all reflections: 0.0245
• Residual factor for significantly intense reflections: 0.0227
• Weighted residual factors for all reflections: 0.0574
• Weighted residual factors for significantly intense reflections: 0.0568
• Goodness-of-fit parameter for all reflections: 1.255
• Goodness-of-fit parameter for significantly intense reflections: 1.288
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No