Information card for entry 7203763

Structure parameters

• Formula: C1.5 H6 Cl0.75 Ga0.25 N3 O1.5
• Calculated formula: C1.5 H6 Cl0.75 Ga0.25 N3 O1.5
• Title of publication: A simple single-source precursor route to the nanostructures of AlN, GaN and InN
• Authors of publication: Sardar, Kripasindhu; Dan, Meenakshi; Schwenzer, Birgit; Rao, C. N. R.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2005
• Journal volume: 15
• Journal issue: 22
• Pages of publication: 2175
• a: 16.495 ± 0.007 Å
• b: 16.495 ± 0.007 Å
• c: 14.697 ± 0.008 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 3463 ± 3 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 165
• Hermann-Mauguin space group symbol: P -3 c 1
• Hall space group symbol: -P 3 2"c
• Residual factor for all reflections: 0.1613
• Residual factor for significantly intense reflections: 0.0613
• Weighted residual factors for all reflections: 0.1555
• Weighted residual factors for significantly intense reflections: 0.1212
• Goodness-of-fit parameter for all reflections: 1.017
• Goodness-of-fit parameter for significantly intense reflections: 1.198
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No