Information card for entry 7204599

Structure parameters

• Formula: C26 H62 Cd2 N2 P4 Se4
• Calculated formula: C26 H62 Cd2 N2 P4 Se4
• SMILES: C[Cd]12[Se]=P(C(C)C)(C(C)C)N=P(C(C)C)(C(C)C)[Se]1[Cd]1(C)[Se]=P(C(C)C)(C(C)C)N=P(C(C)C)(C(C)C)[Se]21
• Title of publication: Deposition of CdSe thin films using a novel single-source precursor; [MeCd{(SePiPr2)2N}]2
• Authors of publication: Afzaal, Mohammmad; Crouch, David; Malik, Mohammad A.; Motevalli, Majid; O'Brien, Paul; Park, Jin-Ho
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2003
• Journal volume: 13
• Journal issue: 4
• Pages of publication: 639
• a: 9.625 ± 0.008 Å
• b: 10.143 ± 0.009 Å
• c: 11.18 ± 0.009 Å
• α: 103.44 ± 0.08°
• β: 80.97 ± 0.09°
• γ: 111.88 ± 0.09°
• Cell volume: 982.1 ± 1.6 ų
• Cell temperature: 160 ± 2 K
• Ambient diffraction temperature: 160 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0409
• Residual factor for significantly intense reflections: 0.0283
• Weighted residual factors for significantly intense reflections: 0.0705
• Weighted residual factors for all reflections included in the refinement: 0.0745
• Goodness-of-fit parameter for all reflections included in the refinement: 1.038
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No