Information card for entry 7204762

Structure parameters

• Formula: C26 H44 N2 Pb S4
• Calculated formula: C26 H44 N2 Pb S4
• SMILES: [Pb]12([S]=C(S1)N(C1CCCCC1)C1CCCCC1)[S]=C(S2)N(C1CCCCC1)C1CCCCC1
• Title of publication: Growth of lead chalcogenide thin films using single-source precursors
• Authors of publication: Afzaal, Mohammad; Ellwood, Katie; Pickett, Nigel L.; O'Brien, Paul; Raftery, Jim; Waters, John
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2004
• Journal volume: 14
• Journal issue: 8
• Pages of publication: 1310
• a: 14.973 ± 0.002 Å
• b: 9.9024 ± 0.0016 Å
• c: 20.581 ± 0.003 Å
• α: 90°
• β: 109.379 ± 0.002°
• γ: 90°
• Cell volume: 2878.6 ± 0.7 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0264
• Residual factor for significantly intense reflections: 0.0243
• Weighted residual factors for significantly intense reflections: 0.0558
• Weighted residual factors for all reflections included in the refinement: 0.0569
• Goodness-of-fit parameter for all reflections included in the refinement: 1.055
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No