Information card for entry 7204763

Structure parameters

• Formula: C44 H88 N4 Pb2 S8
• Calculated formula: C44 H88 N4 Pb2 S8
• Title of publication: Growth of lead chalcogenide thin films using single-source precursors
• Authors of publication: Afzaal, Mohammad; Ellwood, Katie; Pickett, Nigel L.; O'Brien, Paul; Raftery, Jim; Waters, John
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2004
• Journal volume: 14
• Journal issue: 8
• Pages of publication: 1310
• a: 15.4819 ± 0.0014 Å
• b: 9.9772 ± 0.0009 Å
• c: 36.422 ± 0.003 Å
• α: 90°
• β: 97.51 ± 0.002°
• γ: 90°
• Cell volume: 5577.7 ± 0.8 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0902
• Residual factor for significantly intense reflections: 0.066
• Weighted residual factors for significantly intense reflections: 0.1448
• Weighted residual factors for all reflections included in the refinement: 0.1545
• Goodness-of-fit parameter for all reflections included in the refinement: 1.121
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No