Information card for entry 7211558

Structure parameters

• Formula: C52 H58 S4 Si2
• Calculated formula: C52 H58 S4 Si2
• Title of publication: High mobility organic single crystal transistors based on soluble triisopropylsilylethynyl anthracene derivatives
• Authors of publication: Chung, Dae Sung; Park, Jong Won; Park, Jong-Hwa; Moon, Dohyun; Kim, Ghyung Hwa; Lee, Heung-Soo; Lee, Dong Hoon; Shim, Hong-Ku; Kwon, Soon-Ki; Park, Chan Eon
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2010
• Journal volume: 20
• Journal issue: 3
• Pages of publication: 524
• a: 8.234 ± 0.0016 Å
• b: 11.958 ± 0.002 Å
• c: 12.198 ± 0.002 Å
• α: 81.48 ± 0.03°
• β: 85.5 ± 0.03°
• γ: 87.63 ± 0.03°
• Cell volume: 1183.6 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0538
• Residual factor for significantly intense reflections: 0.0517
• Weighted residual factors for significantly intense reflections: 0.1513
• Weighted residual factors for all reflections included in the refinement: 0.154
• Goodness-of-fit parameter for all reflections included in the refinement: 1.04
• Diffraction radiation wavelength: 0.75 Å
• Diffraction radiation type: synchrotron
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No