Information card for entry 7223495

Structure parameters

• Formula: C29 H50 Ge N4 Se Si2
• Calculated formula: C29 H50 Ge N4 Se Si2
• SMILES: [Ge]1(=[Se])([N](=C(N1c1c(C)cccc1C)N(C(C)C)C(C)C)c1c(C)cccc1C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Mixed guanidinato-amido Ge(IV) and Sn(IV) complexes with Ge=E (E = S, Se) double bond and SnS4, Sn2Se2 rings†
• Authors of publication: Barman, Milan Kumar; Nembenna, Sharanappa
• Journal of publication: RSC Adv.
• Year of publication: 2015
• a: 18.6303 ± 0.001 Å
• b: 10.2343 ± 0.0005 Å
• c: 18.6276 ± 0.0009 Å
• α: 90°
• β: 90.622 ± 0.003°
• γ: 90°
• Cell volume: 3551.5 ± 0.3 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0482
• Residual factor for significantly intense reflections: 0.0379
• Weighted residual factors for significantly intense reflections: 0.0868
• Weighted residual factors for all reflections included in the refinement: 0.0906
• Goodness-of-fit parameter for all reflections included in the refinement: 1.052
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No