Information card for entry 7248013
| Formula |
Ga3 K3 S20 Si7 |
| Calculated formula |
Ga3 K3 S20 Si7 |
| Title of publication |
Alkali halide flux synthesis, crystal structure, and photoelectric response of quaternary thiosilicates K3Ga3Si7S20 and K2ZnSi3S8 |
| Authors of publication |
Liu, Jia-Ting; Ablez, Abdusalam; Hu, Qian-Qian; Tang, Jun-Hao; Lv, Chuan; Yang, Lu; Feng, Mei-Ling; Huang, Xiao-Ying |
| Journal of publication |
CrystEngComm |
| Year of publication |
2024 |
| Journal volume |
26 |
| Journal issue |
5 |
| Pages of publication |
691 - 696 |
| a |
6.6611 ± 0.0007 Å |
| b |
36.847 ± 0.003 Å |
| c |
6.6223 ± 0.0008 Å |
| α |
90° |
| β |
91.048 ± 0.009° |
| γ |
90° |
| Cell volume |
1625.1 ± 0.3 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0967 |
| Residual factor for significantly intense reflections |
0.0549 |
| Weighted residual factors for significantly intense reflections |
0.0955 |
| Weighted residual factors for all reflections included in the refinement |
0.1117 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.044 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7248013.html
