Information card for entry 7248014
| Formula |
K2 S8 Si3 Zn |
| Calculated formula |
K2 S8 Si3 Zn |
| Title of publication |
Alkali halide flux synthesis, crystal structure, and photoelectric response of quaternary thiosilicates K3Ga3Si7S20 and K2ZnSi3S8 |
| Authors of publication |
Liu, Jia-Ting; Ablez, Abdusalam; Hu, Qian-Qian; Tang, Jun-Hao; Lv, Chuan; Yang, Lu; Feng, Mei-Ling; Huang, Xiao-Ying |
| Journal of publication |
CrystEngComm |
| Year of publication |
2024 |
| Journal volume |
26 |
| Journal issue |
5 |
| Pages of publication |
691 - 696 |
| a |
6.9955 ± 0.0009 Å |
| b |
7.4508 ± 0.0009 Å |
| c |
14.2302 ± 0.0014 Å |
| α |
87.204 ± 0.009° |
| β |
81.546 ± 0.009° |
| γ |
69.495 ± 0.011° |
| Cell volume |
687.16 ± 0.15 Å3 |
| Cell temperature |
297 ± 2 K |
| Ambient diffraction temperature |
297 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0818 |
| Residual factor for significantly intense reflections |
0.0573 |
| Weighted residual factors for significantly intense reflections |
0.116 |
| Weighted residual factors for all reflections included in the refinement |
0.1294 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.122 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7248014.html
