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Information card for entry 7703704
Preview
Coordinates | 7703704.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C9 H21 N O Zn |
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Calculated formula | C9 H21 N O Zn |
Title of publication | Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition. |
Authors of publication | Han, Seong Ho; Agbenyeke, Raphael Edem; Lee, Ga Yeon; Park, Bo Keun; Kim, Chang Gyoun; Lee, Young Kuk; Son, Seung Uk; Chung, Taek-Mo |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2020 |
Journal volume | 49 |
Journal issue | 14 |
Pages of publication | 4306 - 4314 |
a | 8.9302 ± 0.0003 Å |
b | 7.9409 ± 0.0002 Å |
c | 16.0244 ± 0.0005 Å |
α | 90° |
β | 94.905 ± 0.002° |
γ | 90° |
Cell volume | 1132.19 ± 0.06 Å3 |
Cell temperature | 100 ± 1 K |
Ambient diffraction temperature | 100 ± 1 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0202 |
Residual factor for significantly intense reflections | 0.0181 |
Weighted residual factors for significantly intense reflections | 0.0448 |
Weighted residual factors for all reflections included in the refinement | 0.0457 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.048 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7703704.html
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