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Information card for entry 7703837
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Coordinates | 7703837.cif |
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Original paper (by DOI) | HTML |
Formula | C57 H44 B Cl4 F24 Rh S2 Si |
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Calculated formula | C57 H44 B Cl4 F24 Rh S2 Si |
Title of publication | Si-C(sp<sup>3</sup>) bond activation through oxidative addition at a Rh(i) centre. |
Authors of publication | Azpeitia, S.; Martínez-Martínez, A J; Garralda, M. A.; Weller, A. S.; Huertos, M. A. |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2020 |
Journal volume | 49 |
Journal issue | 17 |
Pages of publication | 5416 - 5419 |
a | 26.2033 ± 0.0002 Å |
b | 12.75 ± 0.0001 Å |
c | 38.5848 ± 0.0003 Å |
α | 90° |
β | 105.003 ± 0.001° |
γ | 90° |
Cell volume | 12451.5 ± 0.18 Å3 |
Cell temperature | 150.01 ± 0.14 K |
Ambient diffraction temperature | 150.01 ± 0.14 K |
Number of distinct elements | 8 |
Space group number | 15 |
Hermann-Mauguin space group symbol | I 1 2/a 1 |
Hall space group symbol | -I 2ya |
Residual factor for all reflections | 0.0326 |
Residual factor for significantly intense reflections | 0.0306 |
Weighted residual factors for significantly intense reflections | 0.0811 |
Weighted residual factors for all reflections included in the refinement | 0.0829 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.025 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 1.54184 Å |
Diffraction radiation type | CuKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7703837.html
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Users of the data should acknowledge the original authors of the
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