Information card for entry 7707933

Structure parameters

• Formula: C64 H90 I2 P2 Rh2 Si4
• Calculated formula: C64 H90 I2 P2 Rh2 Si4
• SMILES: [Rh]12(I)[P](c3c(C[Si]1(C(C)C)C(C)C)cccc3)(c1ccccc1C[Si]2(C(C)C)C(C)C)c1ccccc1.[Rh]12(I)[P](c3c(C[Si]1(C(C)C)C(C)C)cccc3)(c1ccccc1C[Si]2(C(C)C)C(C)C)c1ccccc1
• Title of publication: 14-Electron Rh and Ir silylphosphine complexes and their catalytic activity in alkene functionalization with hydrosilanes.
• Authors of publication: Abeynayake, Niroshani S.; Zamora-Moreno, Julio; Gorla, Saidulu; Donnadieu, Bruno; Muñoz-Hernández, Miguel A; Montiel-Palma, Virginia
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2021
• Journal volume: 50
• Journal issue: 34
• Pages of publication: 11783 - 11792
• a: 9.5705 ± 0.0003 Å
• b: 17.6043 ± 0.0006 Å
• c: 19.2246 ± 0.0007 Å
• α: 93.352 ± 0.001°
• β: 90.187 ± 0.001°
• γ: 98.87 ± 0.002°
• Cell volume: 3194.54 ± 0.19 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0252
• Residual factor for significantly intense reflections: 0.0236
• Weighted residual factors for significantly intense reflections: 0.0543
• Weighted residual factors for all reflections included in the refinement: 0.0553
• Goodness-of-fit parameter for all reflections included in the refinement: 1.105
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No