Information card for entry 7711111

Structure parameters

• Formula: C44 H56 N O3 P2 Rh Si
• Calculated formula: C44 H56 N O3 P2 Rh Si
• SMILES: [Rh]12([P](c3c(N2c2ccc(cc2[Si](C(C)C)(C(C)C)[H]1)C)ccc(c3)C)(C(C)C)C(C)C)[P](Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1
• Title of publication: Distinct modes of Si–H binding to Rh in complexes of a phosphine-diarylamido-silane (SiNP) pincer ligand
• Authors of publication: Rain Talosig, A.; Cosio, Mario N.; Morse, Benjamin; Nguyen, Vinh T.; Kosanovich, Alex J.; Pell, Christopher J.; Li, Chun; Bhuvanesh, Nattamai; Zhou, Jia; Larsen, Anna S.; Ozerov, Oleg. V.
• Journal of publication: Dalton Transactions
• Year of publication: 2022
• a: 12.9201 ± 0.0009 Å
• b: 17.5604 ± 0.0012 Å
• c: 18.3558 ± 0.0013 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 4164.6 ± 0.5 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 7
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for all reflections: 0.0281
• Residual factor for significantly intense reflections: 0.0253
• Weighted residual factors for significantly intense reflections: 0.0589
• Weighted residual factors for all reflections included in the refinement: 0.0602
• Goodness-of-fit parameter for all reflections included in the refinement: 1.051
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No