Information card for entry 7712773

Structure parameters

• Formula: C61 H91 Cl2 Ga N4 Si2
• Calculated formula: C61 H91 Cl2 Ga N4 Si2
• Title of publication: One Silicon Atom of Bis(silylene) Functions as a Selective Lewis Base under Adduct Formation with a Lewis Acid
• Authors of publication: Roesky, Herbert W.; Ding, Yi; Nazish, Mohd; Ruth, Paul Niklas; Herbst-Irmer, Regine; Stalke, Dietmar
• Journal of publication: Dalton Transactions
• Year of publication: 2023
• a: 15.547 ± 0.002 Å
• b: 16.319 ± 0.002 Å
• c: 26.239 ± 0.003 Å
• α: 79.42 ± 0.02°
• β: 88.48 ± 0.03°
• γ: 69.93 ± 0.02°
• Cell volume: 6141.8 ± 1.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0512
• Residual factor for significantly intense reflections: 0.0367
• Weighted residual factors for significantly intense reflections: 0.0869
• Weighted residual factors for all reflections included in the refinement: 0.0942
• Goodness-of-fit parameter for all reflections included in the refinement: 1.027
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No