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Information card for entry 7712779
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Coordinates | 7712779.cif |
---|---|
Original paper (by DOI) | HTML |
Chemical name | [Et4N] [Ni(Me-thiazSedt)2]2 |
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Formula | C12 H16 N2.5 Ni S6 Se2 |
Calculated formula | C12 H16 N2.5 Ni S6 Se2 |
Title of publication | A highly conducting mixed-valence nickel bis(dithiolene) salt [Et4N][Ni(Me-thiazSe-dt)2]2 with selone substitution |
Authors of publication | Hachem, Hadi; Jeannin, olivier; Cui, Hengbo; Kato, Reizo; Fourmigué, Marc; Lorcy, Dominique |
Journal of publication | Dalton Transactions |
Year of publication | 2023 |
a | 8.2371 ± 0.0011 Å |
b | 11.5377 ± 0.0017 Å |
c | 12.3255 ± 0.0016 Å |
α | 65.007 ± 0.005° |
β | 87.675 ± 0.005° |
γ | 70.068 ± 0.005° |
Cell volume | 990.7 ± 0.2 Å3 |
Cell temperature | 296 ± 2 K |
Ambient diffraction temperature | 296 ± 2 K |
Number of distinct elements | 6 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.1803 |
Residual factor for significantly intense reflections | 0.0638 |
Weighted residual factors for significantly intense reflections | 0.1186 |
Weighted residual factors for all reflections included in the refinement | 0.1486 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.951 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
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The link is: https://www.crystallography.net/7712779.html
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