Information card for entry 7716301

Structure parameters

• Formula: C58 H73 Cl D9 Ga Ge N4 P
• Calculated formula: C58 H73 Cl D9 Ga Ge N4 P
• Title of publication: Reactivities of phosphaalkynes towards diverse bis-silylenes.
• Authors of publication: Sun, Xiaofei; Jin, Da; Maier, Stefanie; Hinz, Alexander; Roesky, Peter W.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2024
• Journal volume: 53
• Journal issue: 24
• Pages of publication: 10220 - 10225
• a: 45.988 ± 0.0012 Å
• b: 12.9413 ± 0.0002 Å
• c: 20.6901 ± 0.0005 Å
• α: 90°
• β: 112.909 ± 0.002°
• γ: 90°
• Cell volume: 11342.4 ± 0.5 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 8
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0807
• Residual factor for significantly intense reflections: 0.0513
• Weighted residual factors for significantly intense reflections: 0.123
• Weighted residual factors for all reflections included in the refinement: 0.1389
• Goodness-of-fit parameter for all reflections included in the refinement: 1.027
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No