Crystallography Open Database
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Result: there are 32 entries in the selection
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Searching journal of publication like 'Physical Review Letters'
COD ID | Links | Formula | Space group | Cell parameters | Cell volume | Bibliography |
---|---|---|---|---|---|---|
9011643 | CIF | Cs | C m c e | 10.641; 6.278; 6.249 90; 90; 90 | 417.459 | Schwarz, U.; Takemura, K.; Hanfland, M.; Syassen, K. Crystal structure of cesium-V Locality: synthetic Sample: at P = 25.8 GPa Note: phase V Physical Review Letters, 1998, 81, 2711-2714 |
9011644 | CIF | Si | C m c e | 8.0242; 4.7961; 4.776 90; 90; 90 | 183.804 | Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 38.4 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200 |
9011645 | CIF | Si | C m c e | 7.9686; 4.7759; 4.7546 90; 90; 90 | 180.947 | Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 42.5 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200 |
9011646 | CIF | Si | C m c e | 7.92; 4.7586; 4.7361 90; 90; 90 | 178.495 | Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 45.5 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200 |
9012724 | CIF | Si | F m -3 m | 3.34; 3.34; 3.34 90; 90; 90 | 37.26 | Duclos, S. J.; Vohra, Y. K.; Ruoff, A. L. hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa Sample: at P = 87 GPa Note: fcc structure stable above 78 GPa Physical Review Letters, 1987, 58, 775-777 |
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