Crystallography Open Database

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Searching journal of publication like 'Solid State Communications'

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9015355 CIFO2 TiP 1 21/c 14.589; 4.849; 4.736
90; 98.6; 90
104.201Swamy, V.; Dubrovinsky, L. S.; Dubrovinskaia, N. A.; Langenhorst, F.; Simionovici, A. S.; Drakopoulos, M.; Dmitriev, V.; Weber, H. P.
Size effects on the structure and phase transition behavior of baddeleyite TiO2
Solid State Communications, 2005, 134, 541-546
9013980 CIFNi0.995 OF m -3 m8.3532; 8.3532; 8.3532
90; 90; 90
582.852Taguchi, H.
Relationship between crystal structure and electrical properties of murdochite-type Ni6+2xMn1-xO8 Sample Number: x = 1.0
Solid State Communications, 1998, 108, 635-639
9013979 CIFMn0.2 Ni7.6 O8F m -3 m8.3495; 8.3495; 8.3495
90; 90; 90
582.078Taguchi, H.
Relationship between crystal structure and electrical properties of murdochite-type Ni6+2xMn1-xO8 Sample Number: x = 0.8
Solid State Communications, 1998, 108, 635-639
9013978 CIFMn0.4 Ni7.2 O8F m -3 m8.343; 8.343; 8.343
90; 90; 90
580.72Taguchi, H.
Relationship between crystal structure and electrical properties of murdochite-type Ni6+2xMn1-xO8 Sample Number: x = 0.6
Solid State Communications, 1998, 108, 635-639
9013977 CIFMn0.6 Ni6.8 O8F m -3 m8.3368; 8.3368; 8.3368
90; 90; 90
579.426Taguchi, H.
Relationship between crystal structure and electrical properties of murdochite-type Ni6+2xMn1-xO8 Sample Number: x = 0.4
Solid State Communications, 1998, 108, 635-639
9013976 CIFMn0.8 Ni6.4 O8F m -3 m8.3271; 8.3271; 8.3271
90; 90; 90
577.406Taguchi, H.
Relationship between crystal structure and electrical properties of murdochite-type Ni6+2xMn1-xO8 Sample Number: x = 0.2
Solid State Communications, 1998, 108, 635-639
9013975 CIFMn Ni6 O8F m -3 m8.32; 8.32; 8.32
90; 90; 90
575.93Taguchi, H.
Relationship between crystal structure and electrical properties of murdochite-type Ni6+2xMn1-xO8 Sample Number: x = 0.0
Solid State Communications, 1998, 108, 635-639
9012605 CIFO2 SiP 31 2 14.535; 4.535; 5.17
90; 90; 120
92.082Hazen, R. M.; Finger, L. W.; Hemley, R. J.; Mao, H. K.
High-pressure crystal chemistry and amorphization of alpha-quartz Sample: P = 12.5 GPa
Solid State Communications, 1989, 72, 507-511
9012604 CIFO2 SiP 31 2 14.594; 4.594; 5.2
90; 90; 120
95.042Hazen, R. M.; Finger, L. W.; Hemley, R. J.; Mao, H. K.
High-pressure crystal chemistry and amorphization of alpha-quartz Sample: P = 9.5 GPa
Solid State Communications, 1989, 72, 507-511
9012603 CIFO2 SiP 31 2 14.625; 4.625; 5.216
90; 90; 120
96.625Hazen, R. M.; Finger, L. W.; Hemley, R. J.; Mao, H. K.
High-pressure crystal chemistry and amorphization of alpha-quartz Sample: P = 8.0 GPa
Solid State Communications, 1989, 72, 507-511
9012602 CIFO2 SiP 31 2 14.705; 4.705; 5.25
90; 90; 120
100.649Hazen, R. M.; Finger, L. W.; Hemley, R. J.; Mao, H. K.
High-pressure crystal chemistry and amorphization of alpha-quartz Sample: P = 5.1 GPa
Solid State Communications, 1989, 72, 507-511
9012601 CIFO2 SiP 31 2 14.812; 4.812; 5.327
90; 90; 120
106.823Hazen, R. M.; Finger, L. W.; Hemley, R. J.; Mao, H. K.
High-pressure crystal chemistry and amorphization of alpha-quartz Sample: P = 2.0 Gpa
Solid State Communications, 1989, 72, 507-511
9012600 CIFO2 SiP 31 2 14.914; 4.914; 5.406
90; 90; 120
113.052Hazen, R. M.; Finger, L. W.; Hemley, R. J.; Mao, H. K.
High-pressure crystal chemistry and amorphization of alpha-quartz Sample: P = 1 bar
Solid State Communications, 1989, 72, 507-511
9012599 CIFSbI m -3 m3.45; 3.45; 3.45
90; 90; 90
41.064Aoki, K.; Fujiwara, S.; Kusakabe, M.
New phase transition into the b.c.c structure in antimony at high pressure Sample: at P = 28 GPa Note: cell parameters from ICSD Note: phase known as Sb(IV)
Solid State Communications, 1983, 45, 161-163
9009931 CIFAg Ga S2I -4 2 d5.754; 5.754; 10.295
90; 90; 90
340.852Brandt, G.; Rauber, A.; Schneider, J.
ESR and X-ray analysis of the ternary semiconductors CuAlS2, CuInS2, and AgGaS2 Locality: Synthetic sample Note: chalcopyrite structure
Solid State Communications, 1973, 12, 481-483
9009930 CIFAl Cu S2I -4 2 d5.3336; 5.3336; 10.444
90; 90; 90
297.103Brandt, G.; Rauber, A.; Schneider, J.
ESR and X-ray analysis of the ternary semiconductors CuAlS2, CuInS2, and AgGaS2 Locality: Synthetic sample Note: chalcopyrite structure
Solid State Communications, 1973, 12, 481-483
9009929 CIFCu In S2I -4 2 d5.523; 5.523; 11.12
90; 90; 90
339.199Brandt, G.; Rauber, A.; Schneider, J.
ESR and X-ray analysis of the ternary semiconductors CuAlS2, CuInS2, and AgGaS2 Locality: Synthetic sample Note: chalcopyrite structure
Solid State Communications, 1973, 12, 481-483
9009928 CIFCu Ga S2I -4 2 d5.351; 5.351; 10.48
90; 90; 90
300.076Brandt, G.; Rauber, A.; Schneider, J.
ESR and X-ray analysis of the ternary semiconductors CuAlS2, CuInS2, and AgGaS2 Locality: Synthetic sample Note: Chalcopyrite structure
Solid State Communications, 1973, 12, 481-483
6000274 CIFH4 Li4 O14 Rb2 Se3P 1 21/c 15.256; 5.178; 26.739
90; 93.11; 90
726.65Pietraszko, A.; Bronowska, W.
Rb2Li4(SeO4)(3)2H(2)O - the new crystal of selenates hydrates family
Solid State Communications, 1999, 111, 205-209
5000209 CIF?P c a 218.5496; 8.5496; 12.091
90; 90; 90
883.8Dowty, E; Clark, J R
Solid State Communications, 1972, 10, 543-548

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