Crystallography Open Database
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Displaying all data in COD
COD ID  |
Links | Formula  |
Space group |
Cell parameters | Cell volume |
Bibliography |
|---|---|---|---|---|---|---|
| 9011644 | CIF | Si | C m c e | 8.0242; 4.7961; 4.776 90; 90; 90 | 183.804 | Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 38.4 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200 |
| 9011645 | CIF | Si | C m c e | 7.9686; 4.7759; 4.7546 90; 90; 90 | 180.947 | Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 42.5 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200 |
| 9011646 | CIF | Si | C m c e | 7.92; 4.7586; 4.7361 90; 90; 90 | 178.495 | Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 45.5 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200 |
| 9011647 | CIF | O2 | P m -3 n | 6.78; 6.78; 6.78 90; 90; 90 | 311.666 | Cox, D. E.; Samuelsen, E. J.; Ceckurts, K. H. Neutron-Diffraction determination of the crystal structure and magnetic form factor of gamma-oxygen Sample: at T = 46 K Note: gamma phase, stable between 44 K & 55 K Physical Review B, 1973, 7, 3102-3111 |
| 9011648 | CIF | Se | P 31 2 1 | 4.368; 4.368; 4.958 90; 90; 120 | 81.922 | Keller, R.; Holzapfel, W. B.; Schulz, H. Effect of pressure on the atom positions in Se and Te Note: known as alpha phase with trigonal structure Physical Review B, 1977, 16, 4404-4412 |
| 9011649 | CIF | Se | P 31 2 1 | 4.052; 4.052; 5.038 90; 90; 120 | 71.635 | Keller, R.; Holzapfel, W. B.; Schulz, H. Effect of pressure on the atom positions in Se and Te Sample: at P = 2.58 GPa Note: known as alpha phase with trigonal structure Physical Review B, 1977, 16, 4404-4412 |
| 9011650 | CIF | Se | P 31 2 1 | 3.956; 3.956; 5.069 90; 90; 120 | 68.701 | Keller, R.; Holzapfel, W. B.; Schulz, H. Effect of pressure on the atom positions in Se and Te Sample: at P = 4.15 GPa Note: known as alpha phase with trigonal structure Physical Review B, 1977, 16, 4404-4412 |
| 9011651 | CIF | Se | P 31 2 1 | 3.91; 3.91; 5.08 90; 90; 120 | 67.259 | Keller, R.; Holzapfel, W. B.; Schulz, H. Effect of pressure on the atom positions in Se and Te Sample: at P = 4.99 GPa Note: known as alpha phase with trigonal structure Physical Review B, 1977, 16, 4404-4412 |
| 9011652 | CIF | Se | P 31 2 1 | 3.846; 3.846; 5.095 90; 90; 120 | 65.267 | Keller, R.; Holzapfel, W. B.; Schulz, H. Effect of pressure on the atom positions in Se and Te Sample: at P = 6.57 GPa Note: known as alpha phase with trigonal structure Physical Review B, 1977, 16, 4404-4412 |
| 9011653 | CIF | Se | P 31 2 1 | 3.81; 3.81; 5.11 90; 90; 120 | 64.239 | Keller, R.; Holzapfel, W. B.; Schulz, H. Effect of pressure on the atom positions in Se and Te Sample: at P = 7.70 GPa Note: known as alpha phase with trigonal structure Physical Review B, 1977, 16, 4404-4412 |
| 9011654 | CIF | Se | P 31 2 1 | 3.779; 3.779; 5.109 90; 90; 120 | 63.186 | Keller, R.; Holzapfel, W. B.; Schulz, H. Effect of pressure on the atom positions in Se and Te Sample: at P = 8.64 GPa Note: known as alpha phase with trigonal structure Physical Review B, 1977, 16, 4404-4412 |
| 9011655 | CIF | Sc | P 4/n m m :1 | 4.73; 4.73; 3.18 90; 90; 90 | 71.146 | Vohra, Y. K.; Grosshans, W.; Holzapfel, W. B. High-pressure phase transformation in scandium Sample: at P = 33.5 GPa Physical Review B, 1982, 25, 6019-6021 |
| 9011656 | CIF | Si | I m m a | 4.737; 4.502; 2.55 90; 90; 90 | 54.381 | McMahon, M. I.; Nelmes, R. J. New high-pressure phase of Si Sample: structure exists between 13 GPa to 18 GPa Note: intermediate structure between those of Si II and Si V Physical Review B, 1993, 47, 8337-8340 |
| 9011657 | CIF | Al N | P 63 m c | 3.11; 3.11; 4.98 90; 90; 120 | 41.714 | Xu, Y. N.; Ching, W. Y. Electronic, optical, and structural properties of some wurtzite crystals Physical Review B, 1993, 48, 4335-4351 |
| 9011658 | CIF | Ga N | P 63 m c | 3.19; 3.19; 5.189 90; 90; 120 | 45.729 | Xu, Y. N.; Ching, W. Y. Electronic, optical, and structural properties of some wurtzite crystals Physical Review B, 1993, 48, 4335-4351 |
| 9011659 | CIF | Be O | P 63 m c | 2.698; 2.698; 4.38 90; 90; 120 | 27.611 | Xu, Y. N.; Ching, W. Y. Electronic, optical, and structural properties of some wurtzite crystals Physical Review B, 1993, 48, 4335-4351 |
| 9011660 | CIF | B N | P 63 m c | 2.536; 2.536; 4.199 90; 90; 120 | 23.387 | Xu, Y. N.; Ching, W. Y. Electronic, optical, and structural properties of some wurtzite crystals Physical Review B, 1993, 48, 4335-4351 |
| 9011661 | CIF | C Si | P 63 m c | 3.076; 3.076; 5.048 90; 90; 120 | 41.364 | Xu, Y. N.; Ching, W. Y. Electronic, optical, and structural properties of some wurtzite crystals Physical Review B, 1993, 48, 4335-4351 |
| 9011662 | CIF | O Zn | P 63 m c | 3.249; 3.249; 5.207 90; 90; 120 | 47.601 | Xu, Y. N.; Ching, W. Y. Electronic, optical, and structural properties of some wurtzite crystals Physical Review B, 1993, 48, 4335-4351 |
| 9011663 | CIF | Cd S | P 63 m c | 4.137; 4.137; 6.7144 90; 90; 120 | 99.52 | Xu, Y. N.; Ching, W. Y. Electronic, optical, and structural properties of some wurtzite crystals Physical Review B, 1993, 48, 4335-4351 |
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