Crystallography Open Database

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Searching journal of publication like 'Chemistry of Materials' volume of publication is 26

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4001863 CIFBa8 S15 Sn4P c a 2128.715; 8.5084; 25.367
90; 90; 90		6197.6Luo, Zhong-Zhen; Lin, Chen-Sheng; Zhang, Wei-Long; Zhang, Hao; He, Zhang-Zhen; Cheng, Wen-Dan
Ba8Sn4S15: A Strong Second Harmonic Generation Sulfide with Zero-Dimensional Crystal Structure
Chemistry of Materials, 2014, 26, 1093
4001864 CIFC32 H24 N8 NiP 1 21/n 114.752; 4.7121; 17.372
90; 104.402; 90		1169.6Takahashi, Yukihiro; Hayakawa, Kei; Takayama, Katsuya; Yokokura, Seiya; Harada, Jun; Hasegawa, Hiroyuki; Inabe, Tamotsu
Charge Conduction Properties at the Contact Interface between (Phthalocyaninato)nickel(II) and Electron Acceptor Single Crystals
Chemistry of Materials, 2014, 26, 993
4001865 CIFGa3 Ho Mn0.08P m -3 m4.2387; 4.2387; 4.2387
90; 90; 90		76.155Fulfer, Bradford W.; McAlpin, Jacob D.; Engelkemier, Joshua; McCandless, Gregory T.; Prestigiacomo, Joseph; Stadler, Shane; Fredrickson, Daniel C.; Chan, Julia Y.
Filling in the Holes: Structural and Magnetic Properties of the Chemical Pressure Stabilized LnMnxGa3(Ln = Ho‒Tm;x< 0.15)
Chemistry of Materials, 2014, 26, 1170
4001866 CIFGa3 Ho Mn0.152P m -3 m4.2516; 4.2516; 4.2516
90; 90; 90		76.852Fulfer, Bradford W.; McAlpin, Jacob D.; Engelkemier, Joshua; McCandless, Gregory T.; Prestigiacomo, Joseph; Stadler, Shane; Fredrickson, Daniel C.; Chan, Julia Y.
Filling in the Holes: Structural and Magnetic Properties of the Chemical Pressure Stabilized LnMnxGa3(Ln = Ho‒Tm;x< 0.15)
Chemistry of Materials, 2014, 26, 1170
4001867 CIFEr Ga3P m -3 m4.2149; 4.2149; 4.2149
90; 90; 90		74.88Fulfer, Bradford W.; McAlpin, Jacob D.; Engelkemier, Joshua; McCandless, Gregory T.; Prestigiacomo, Joseph; Stadler, Shane; Fredrickson, Daniel C.; Chan, Julia Y.
Filling in the Holes: Structural and Magnetic Properties of the Chemical Pressure Stabilized LnMnxGa3(Ln = Ho‒Tm;x< 0.15)
Chemistry of Materials, 2014, 26, 1170

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