Information card for entry 7208134

Structure parameters

• Formula: C22 H18 O2
• Calculated formula: C22 H18 O2
• SMILES: O=C1[C@@H]2[C@@H]3c4ccccc4[C@H]([C@@H]2C(=O)c2c1cccc2)C3=C(C)C
• Title of publication: Tetracene-based field-effect transistors using solution processes
• Authors of publication: Chien, Ching-Ting; Lin, Chih-Chun; Watanabe, Motonori; Lin, Yan-Duo; Chao, Ting-Han; Chiang, Ta-chung; Huang, Xin-Hua; Wen, Yuh-Sheng; Tu, Chih-Hsin; Sun, Chia-Hsing; Chow, Tahsin J.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2012
• Journal volume: 22
• Journal issue: 26
• Pages of publication: 13070
• a: 8.1278 ± 0.0004 Å
• b: 9.4651 ± 0.0004 Å
• c: 10.7576 ± 0.0005 Å
• α: 102.711 ± 0.002°
• β: 102.324 ± 0.002°
• γ: 91.986 ± 0.002°
• Cell volume: 785.8 ± 0.06 ų
• Cell temperature: 100 ± 0.1 K
• Ambient diffraction temperature: 100 ± 0.1 K
• Number of distinct elements: 3
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0432
• Residual factor for significantly intense reflections: 0.0374
• Weighted residual factors for significantly intense reflections: 0.096
• Weighted residual factors for all reflections included in the refinement: 0.1003
• Goodness-of-fit parameter for all reflections included in the refinement: 1.053
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No