Information card for entry 4127810
| Chemical name |
5,9,14,18-tetraoctyl-bisnaphtho[2',3':3,4]cyclobut[1,2-b:1',2'-i]anthracene |
| Formula |
C66 H82 |
| Calculated formula |
C66 H82 |
| SMILES |
c1c2cc3c4c(c(c5ccccc5c4CCCCCCCC)CCCCCCCC)c3cc2cc2cc3c4c(c5ccccc5c(c4c3cc12)CCCCCCCC)CCCCCCCC |
| Title of publication |
Crystal Engineering of Biphenylene-Containing Acenes for High-Mobility Organic Semiconductors. |
| Authors of publication |
Wang, Jinlian; Chu, Ming; Fan, Jian-Xun; Lau, Tsz-Ki; Ren, Ai-Min; Lu, Xinhui; Miao, Qian |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2019 |
| Journal volume |
141 |
| Journal issue |
8 |
| Pages of publication |
3589 - 3596 |
| a |
18.5667 ± 0.0008 Å |
| b |
5.4401 ± 0.0002 Å |
| c |
26.2707 ± 0.001 Å |
| α |
90° |
| β |
100.313 ± 0.0013° |
| γ |
90° |
| Cell volume |
2610.59 ± 0.18 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
2 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.1222 |
| Residual factor for significantly intense reflections |
0.0712 |
| Weighted residual factors for significantly intense reflections |
0.1742 |
| Weighted residual factors for all reflections included in the refinement |
0.2024 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.019 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
For the version history of this entry, please navigate to main COD server.
The link is:
https://www.crystallography.net/4127810.html