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Information card for entry 4127810
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Coordinates | 4127810.cif |
---|---|
Original paper (by DOI) | HTML |
Chemical name | 5,9,14,18-tetraoctyl-bisnaphtho[2',3':3,4]cyclobut[1,2-b:1',2'-i]anthracene |
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Formula | C66 H82 |
Calculated formula | C66 H82 |
SMILES | c1c2cc3c4c(c(c5ccccc5c4CCCCCCCC)CCCCCCCC)c3cc2cc2cc3c4c(c5ccccc5c(c4c3cc12)CCCCCCCC)CCCCCCCC |
Title of publication | Crystal Engineering of Biphenylene-Containing Acenes for High-Mobility Organic Semiconductors. |
Authors of publication | Wang, Jinlian; Chu, Ming; Fan, Jian-Xun; Lau, Tsz-Ki; Ren, Ai-Min; Lu, Xinhui; Miao, Qian |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2019 |
Journal volume | 141 |
Journal issue | 8 |
Pages of publication | 3589 - 3596 |
a | 18.5667 ± 0.0008 Å |
b | 5.4401 ± 0.0002 Å |
c | 26.2707 ± 0.001 Å |
α | 90° |
β | 100.313 ± 0.0013° |
γ | 90° |
Cell volume | 2610.59 ± 0.18 Å3 |
Cell temperature | 296 ± 2 K |
Ambient diffraction temperature | 296 ± 2 K |
Number of distinct elements | 2 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.1222 |
Residual factor for significantly intense reflections | 0.0712 |
Weighted residual factors for significantly intense reflections | 0.1742 |
Weighted residual factors for all reflections included in the refinement | 0.2024 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.019 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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