Information card for entry 4315528

Structure parameters

• Formula: C56 H106 Ge2 O P4 Si8
• Calculated formula: C56 H106 Ge2 O P4 Si8
• SMILES: [Ge]1(P(C([Si](C)(C)C)[Si](C)(C)C)c2ccccc2)[P]([Ge](P(C([Si](C)(C)C)[Si](C)(C)C)c2ccccc2)[P]1(C([Si](C)(C)C)[Si](C)(C)C)c1ccccc1)(C([Si](C)(C)C)[Si](C)(C)C)c1ccccc1.O(CC)CC
• Title of publication: Germanium(II) and Tin(II) Complexes of a Sterically Demanding Phosphanide Ligand
• Authors of publication: Keith Izod; John Stewart; Ewan R. Clark; William Clegg; Ross W. Harrington
• Journal of publication: Inorganic Chemistry
• Year of publication: 2010
• Journal volume: 49
• Pages of publication: 4698 - 4707
• a: 21.4695 ± 0.0013 Å
• b: 22.5652 ± 0.0013 Å
• c: 29.9365 ± 0.0018 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 14503.1 ± 1.5 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 6
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for all reflections: 0.0931
• Residual factor for significantly intense reflections: 0.0507
• Weighted residual factors for significantly intense reflections: 0.1014
• Weighted residual factors for all reflections included in the refinement: 0.1208
• Goodness-of-fit parameter for all reflections included in the refinement: 1.14
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No