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Information card for entry 4502871
Preview
Coordinates | 4502871.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C33 H59 Cl6 F8 I4 N3 O4 |
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Calculated formula | C33 H59 Cl6 F8 I4 N3 O4 |
Title of publication | Exploitation of the Menshutkin Reaction for the Controlled Assembly of Halogen Bonded Architectures Incorporating 1,2-Diiodotetrafluorobenzene and 1,3,5-Triiodotrifluorobenzene |
Authors of publication | Pfrunder, Michael C.; Micallef, Aaron S.; Rintoul, Llewellyn; Arnold, Dennis P.; Davy, Karl J. P.; McMurtrie, John |
Journal of publication | Crystal Growth & Design |
Year of publication | 2012 |
Journal volume | 12 |
Journal issue | 2 |
Pages of publication | 714 |
a | 27.3744 ± 0.0009 Å |
b | 7.0166 ± 0.0002 Å |
c | 26.3653 ± 0.0009 Å |
α | 90° |
β | 93.36 ± 0.003° |
γ | 90° |
Cell volume | 5055.4 ± 0.3 Å3 |
Cell temperature | 173 ± 2 K |
Ambient diffraction temperature | 173 ± 2 K |
Number of distinct elements | 7 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0414 |
Residual factor for significantly intense reflections | 0.0293 |
Weighted residual factors for significantly intense reflections | 0.0705 |
Weighted residual factors for all reflections included in the refinement | 0.0726 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.03 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
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The link is: https://www.crystallography.net/4502871.html
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