Information card for entry 7024277

Structure parameters

• Formula: C35 H60 Ge N4 Si2
• Calculated formula: C35 H60 Ge N4 Si2
• SMILES: [Ge]1(N(c2c(cccc2C(C)C)C(C)C)C(=C)C=C(N1c1c(cccc1C(C)C)C(C)C)C)(N[Si](C)(C)C)N[Si](C)(C)C
• Title of publication: Reactivity of germanium(II) hydride with nitrous oxide, trimethylsilyl azide, ketones, and alkynes and the reaction of a methyl analogue with trimethylsilyl diazomethane.
• Authors of publication: Jana, Anukul; Roesky, Herbert W.; Schulzke, Carola
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2010
• Journal volume: 39
• Journal issue: 1
• Pages of publication: 132 - 138
• a: 10.389 ± 0.002 Å
• b: 32.555 ± 0.007 Å
• c: 12.216 ± 0.002 Å
• α: 90°
• β: 112.28 ± 0.03°
• γ: 90°
• Cell volume: 3823.2 ± 1.5 ų
• Cell temperature: 133 ± 2 K
• Ambient diffraction temperature: 133 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0373
• Residual factor for significantly intense reflections: 0.0304
• Weighted residual factors for significantly intense reflections: 0.0725
• Weighted residual factors for all reflections included in the refinement: 0.0748
• Goodness-of-fit parameter for all reflections included in the refinement: 1.033
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No