Crystallography Open Database
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Searching journal of publication like 'Chemistry of Materials' volume of publication is 23
COD ID  |
Links | Formula  |
Space group |
Cell parameters | Cell volume |
Bibliography |
|---|---|---|---|---|---|---|
| 4000800 | CIF | Cu1.77 Nd0.67 Rb0.23 Te2 | P 63/m | 9.9985; 9.9985; 4.1487 90; 90; 120 | 359.18 | Meng, Chang-Yu; Chen, Hong; Wang, Peng; Chen, Ling Syntheses, Structures, and Magnetic and Thermoelectric Properties of Double-Tunnel Tellurides: AxRE2Cu6‒xTe6(A = K‒Cs; RE = La‒Nd) Chemistry of Materials, 2011, 23, 4910 |
| 4000801 | CIF | Cs0.25 Cu1.75 La0.67 Te2 | P 63/m | 10.0841; 10.0841; 4.2366 90; 90; 120 | 373.1 | Meng, Chang-Yu; Chen, Hong; Wang, Peng; Chen, Ling Syntheses, Structures, and Magnetic and Thermoelectric Properties of Double-Tunnel Tellurides: AxRE2Cu6‒xTe6(A = K‒Cs; RE = La‒Nd) Chemistry of Materials, 2011, 23, 4910 |
| 4000802 | CIF | Ce0.67 Cs0.26 Cu1.74 Te2 | P 63/m | 10.0777; 10.0777; 4.1918 90; 90; 120 | 368.68 | Meng, Chang-Yu; Chen, Hong; Wang, Peng; Chen, Ling Syntheses, Structures, and Magnetic and Thermoelectric Properties of Double-Tunnel Tellurides: AxRE2Cu6‒xTe6(A = K‒Cs; RE = La‒Nd) Chemistry of Materials, 2011, 23, 4910 |
| 4000803 | CIF | Cs0.24 Cu1.76 Pr0.67 Te2 | P 63/m | 10.0763; 10.0763; 4.1702 90; 90; 120 | 366.68 | Meng, Chang-Yu; Chen, Hong; Wang, Peng; Chen, Ling Syntheses, Structures, and Magnetic and Thermoelectric Properties of Double-Tunnel Tellurides: AxRE2Cu6‒xTe6(A = K‒Cs; RE = La‒Nd) Chemistry of Materials, 2011, 23, 4910 |
| 4000804 | CIF | Cs0.25 Cu1.75 Nd0.67 Te2 | P 63/m | 10.0695; 10.0695; 4.1461 90; 90; 120 | 364.07 | Meng, Chang-Yu; Chen, Hong; Wang, Peng; Chen, Ling Syntheses, Structures, and Magnetic and Thermoelectric Properties of Double-Tunnel Tellurides: AxRE2Cu6‒xTe6(A = K‒Cs; RE = La‒Nd) Chemistry of Materials, 2011, 23, 4910 |
| 4000805 | CIF | Ce0.33 Pt1.67 Sb0.33 | R -3 :H | 5.3535; 5.3535; 31.0814 90; 90; 120 | 771.45 | Salamakha, L.; Bauer, E.; Michor, H.; Hilscher, G.; Müller, H.; Svagera, R.; Sologub, O.; Rogl, P.; Hester, J.; Roisnel, T.; Giester, G.; Mudryi, S. First-Order Phase Transition in a New CaCu5-Related Antimonide, CePt5Sb Chemistry of Materials, 2011, 23, 4016 |
| 4000806 | CIF | Cu O4 W | P -1 | 4.62; 5.747; 4.857 91.34; 91.48; 84.68 | 128.3 | Ruiz-Fuertes, J.; Friedrich, A.; Pellicer-Porres, J.; Errandonea, D.; Segura, A.; Morgenroth, W.; Haussühl, E.; Tu, C.-Y.; Polian, A. Structure Solution of the High-Pressure Phase of CuWO4and Evolution of the Jahn‒Teller Distortion Chemistry of Materials, 2011, 23, 4220 |
| 4000807 | CIF | Cu O4 W | P 1 2/c 1 | 4.542; 5.461; 4.98 90.5; 86.8; 89.84 | 123.3 | Ruiz-Fuertes, J.; Friedrich, A.; Pellicer-Porres, J.; Errandonea, D.; Segura, A.; Morgenroth, W.; Haussühl, E.; Tu, C.-Y.; Polian, A. Structure Solution of the High-Pressure Phase of CuWO4and Evolution of the Jahn‒Teller Distortion Chemistry of Materials, 2011, 23, 4220 |
| 4000808 | CIF | Cu O4 W | P -1 | 4.695; 5.832; 4.876 91.64; 92.39; 82.93 | 132.34 | Ruiz-Fuertes, J.; Friedrich, A.; Pellicer-Porres, J.; Errandonea, D.; Segura, A.; Morgenroth, W.; Haussühl, E.; Tu, C.-Y.; Polian, A. Structure Solution of the High-Pressure Phase of CuWO4and Evolution of the Jahn‒Teller Distortion Chemistry of Materials, 2011, 23, 4220 |
| 4000809 | CIF | Cu O4 W | P -1 | 4.708; 5.84; 4.884 91.77; 92.47; 82.81 | 133.06 | Ruiz-Fuertes, J.; Friedrich, A.; Pellicer-Porres, J.; Errandonea, D.; Segura, A.; Morgenroth, W.; Haussühl, E.; Tu, C.-Y.; Polian, A. Structure Solution of the High-Pressure Phase of CuWO4and Evolution of the Jahn‒Teller Distortion Chemistry of Materials, 2011, 23, 4220 |
| 4000810 | CIF | Cs2 Cu3 F12 Zr | P 1 21/m 1 | 7.798; 7.212; 10.351 90; 93.97; 90 | 580.7 | Reisinger, Sandra A.; Tang, Chiu C.; Thompson, Stephen P.; Morrison, Finlay D.; Lightfoot, Philip Structural Phase Transition in theS=1/2Kagome System Cs2ZrCu3F12and a Comparison to the Valence-Bond-Solid Phase in Rb2SnCu3F12 Chemistry of Materials, 2011, 23, 4234 |
| 4000811 | CIF | Cs2 Cu3 F12 Zr | R -3 m :H | 7.156; 7.156; 20.447 90; 90; 120 | 906.8 | Reisinger, Sandra A.; Tang, Chiu C.; Thompson, Stephen P.; Morrison, Finlay D.; Lightfoot, Philip Structural Phase Transition in theS=1/2Kagome System Cs2ZrCu3F12and a Comparison to the Valence-Bond-Solid Phase in Rb2SnCu3F12 Chemistry of Materials, 2011, 23, 4234 |
| 4000812 | CIF | Bi Fe0.75 Mn0.25 O3 | P n m a | 5.60125; 15.661; 11.25153 90; 90; 90 | 987 | Belik, Alexei A.; Abakumov, Artem M.; Tsirlin, Alexander A.; Hadermann, Joke; Kim, Jungeun; Van Tendeloo, Gustaaf; Takayama-Muromachi, Eiji Structure and Magnetic Properties of BiFe0.75Mn0.25O3Perovskite Prepared at Ambient and High Pressure Chemistry of Materials, 2011, 23, 4505 |
| 4000813 | CIF | In2 S3 | I 41/a m d :2 | 7.6205; 7.6205; 32.3603 90; 90; 90 | 1879.23 | Lafond, A.; Rocquefelte, X.; Paris, M.; Guillot-Deudon, C.; Jouenne, V. Crystal Chemistry and Electronic Structure of the Photovoltaic Buffer Layer, (In1-xAlx)2S3 Chemistry of Materials, 2011, 23, 5168 |
| 4000814 | CIF | Al0.06 In1.94 S3 | I 41/a m d :2 | 7.6038; 7.6038; 32.26 90; 90; 90 | 1865.2 | Lafond, A.; Rocquefelte, X.; Paris, M.; Guillot-Deudon, C.; Jouenne, V. Crystal Chemistry and Electronic Structure of the Photovoltaic Buffer Layer, (In1-xAlx)2S3 Chemistry of Materials, 2011, 23, 5168 |
| 4000815 | CIF | Al0.293 In2.373 S4 | F d -3 m :2 | 10.699; 10.699; 10.699 90; 90; 90 | 1224.7 | Lafond, A.; Rocquefelte, X.; Paris, M.; Guillot-Deudon, C.; Jouenne, V. Crystal Chemistry and Electronic Structure of the Photovoltaic Buffer Layer, (In1-xAlx)2S3 Chemistry of Materials, 2011, 23, 5168 |
| 4000816 | CIF | C74 H78 N2 O4 S8 | P 1 21/c 1 | 20.041; 16.808; 9.9175 90; 100.606; 90 | 3283.6 | Ahmed, Eilaf; Ren, Guoqiang; Kim, Felix S.; Hollenbeck, Emily C.; Jenekhe, Samson A. Design of New Electron Acceptor Materials for Organic Photovoltaics: Synthesis, Electron Transport, Photophysics, and Photovoltaic Properties of Oligothiophene-Functionalized Naphthalene Diimides Chemistry of Materials, 2011, 23, 4563 |
| 4000817 | CIF | Hg3 S4 Tl2 | C 1 2/c 1 | 11.493; 6.6953; 12.937 90; 114.98; 90 | 902.4 | Johnsen, Simon; Peter, Sebastian C.; Nguyen, Sandy L.; Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J.; Kanatzidis, Mercouri G. Tl2Hg3Q4(Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors Chemistry of Materials, 2011, 23, 4375 |
| 4000818 | CIF | Hg3 Se4 Tl2 | C 1 2/c 1 | 11.977; 6.9264; 13.203 90; 116.36; 90 | 981.4 | Johnsen, Simon; Peter, Sebastian C.; Nguyen, Sandy L.; Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J.; Kanatzidis, Mercouri G. Tl2Hg3Q4(Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors Chemistry of Materials, 2011, 23, 4375 |
| 4000819 | CIF | Hg3 Te4 Tl2 | C 1 2/c 1 | 12.648; 7.3574; 13.701 90; 117.48; 90 | 1131.1 | Johnsen, Simon; Peter, Sebastian C.; Nguyen, Sandy L.; Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J.; Kanatzidis, Mercouri G. Tl2Hg3Q4(Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors Chemistry of Materials, 2011, 23, 4375 |
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