Crystallography Open Database

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Searching journal of publication like 'Chemistry of Materials' volume of publication is 21

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4000968 CIFC30 H20 F2 N2 O4P 1 21/n 17.8416; 4.8947; 29.7907
90; 97.227; 90
1134.35Jung, Byung Jun; Sun, Jia; Lee, Taegweon; Sarjeant, Amy; Katz, Howard E.
Low-Temperature-Processible, Transparent, and Air-Operable n-Channel Fluorinated Phenylethylated Naphthalenetetracarboxylic Diimide Semiconductors Applied to Flexible Transistors
Chemistry of Materials, 2009, 21, 94
4000969 CIFC30 H18 F4 N2 O4P 1 21/n 16.622; 22.2242; 7.8567
90; 92.006; 90
1155.55Jung, Byung Jun; Sun, Jia; Lee, Taegweon; Sarjeant, Amy; Katz, Howard E.
Low-Temperature-Processible, Transparent, and Air-Operable n-Channel Fluorinated Phenylethylated Naphthalenetetracarboxylic Diimide Semiconductors Applied to Flexible Transistors
Chemistry of Materials, 2009, 21, 94
4000970 CIFBa3 Cu14.35 Se8.55 Te2.45R -3 m :H12.1718; 12.1718; 28.197
90; 90; 120
3617.8Kuropatwa, Bryan; Cui, Yanjie; Assoud, Abdeljalil; Kleinke, Holger
Crystal Structure and Physical Properties of the New Selenide−Tellurides Ba3Cu17−x(Se,Te)11
Chemistry of Materials, 2009, 21, 88
4000971 CIFBa3 Cu14.38 Se8.3 Te2.7R -3 m :H12.1897; 12.1897; 28.2087
90; 90; 120
3629.9Kuropatwa, Bryan; Cui, Yanjie; Assoud, Abdeljalil; Kleinke, Holger
Crystal Structure and Physical Properties of the New Selenide−Tellurides Ba3Cu17−x(Se,Te)11
Chemistry of Materials, 2009, 21, 88
4000972 CIFBa3 Cu15.05 Se7.73 Te3.27R -3 m :H12.2339; 12.2339; 28.2819
90; 90; 120
3665.8Kuropatwa, Bryan; Cui, Yanjie; Assoud, Abdeljalil; Kleinke, Holger
Crystal Structure and Physical Properties of the New Selenide−Tellurides Ba3Cu17−x(Se,Te)11
Chemistry of Materials, 2009, 21, 88
4000973 CIFFe3 N1.08P 3 1 24.7241; 4.7241; 4.3862
90; 90; 120
84.773Niewa, Rainer; Rau, Dieter; Wosylus, Aron; Meier, Katrin; Hanfland, Michael; Wessel, Michael; Dronskowski, Richard; Dzivenko, Dmytro A.; Riedel, Ralf; Schwarz, Ulrich
High-Pressure, High-Temperature Single-Crystal Growth, Ab initio Electronic Structure Calculations, and Equation of State of ε-Fe3N1+x
Chemistry of Materials, 2009, 21, 392
4000974 CIFFe3 N1.2P 63 2 24.7241; 4.7241; 4.3862
90; 90; 120
84.773Niewa, Rainer; Rau, Dieter; Wosylus, Aron; Meier, Katrin; Hanfland, Michael; Wessel, Michael; Dronskowski, Richard; Dzivenko, Dmytro A.; Riedel, Ralf; Schwarz, Ulrich
High-Pressure, High-Temperature Single-Crystal Growth, Ab initio Electronic Structure Calculations, and Equation of State of ε-Fe3N1+x
Chemistry of Materials, 2009, 21, 392
4000975 CIFC11 H44 In6 N11 Te9P 6111.6147; 11.6147; 51.9135
90; 90; 120
6064.9Zhang, Qichun; Chung, In; Jang, Joon I.; Ketterson, John B.; Kanatzidis, Mercouri G.
A Polar and Chiral Indium Telluride Featuring Supertetrahedral T2 Clusters and Nonlinear Optical Second Harmonic Generation
Chemistry of Materials, 2009, 21, 12
4000976 CIFC78 H62 Ag B F4 S4 SiP b c a17.6591; 17.6477; 42.628
90; 90; 90
13285Huang, Guo; Yang, Chen; Xu, Zhengtao; Wu, Haohan; Li, Jing; Zeller, Matthias; Hunter, Allen D.; Chui, Stephen Sin-Yin; Che, Chi-Ming
Shape-Selective Sorption and Fluorescence Sensing of Aromatics in a Flexible Network of Tetrakis[(4-methylthiophenyl)ethynyl]silane and AgBF4
Chemistry of Materials, 2009, 21, 541
4000977 CIFC32 H18 O2P c c n15.92; 18.508; 6.9299
90; 90; 90
2041.9Kobayashi, Norihito; Sasaki, Mari; Nomoto, Kazumasa
Stableperi-Xanthenoxanthene Thin-Film Transistors with Efficient Carrier Injection
Chemistry of Materials, 2009, 21, 552
4000978 CIFC22 H34 F12 Mg O12P -18.952; 9.036; 11.98
110.44; 108.64; 97.06
829.9Fragalà, Maria E.; Toro, Roberta G.; Rossi, Patrizia; Dapporto, Paolo; Malandrino, Graziella
Synthesis, Characterization, and Mass Transport Properties of a Self-Generating Single-Source Magnesium Precursor for MOCVD of MgF2Films
Chemistry of Materials, 2009, 21, 2062
4000979 CIFC14 H24 O22 S2 Yb4I b a m12.5401; 35.6519; 7.0347
90; 90; 90
3145.1Gándara, Felipe; Puebla, Enrique Gutiérrez; Iglesias, Marta; Proserpio, Davide M.; Snejko, Natalia; Monge, M. Ángeles
Controlling the Structure of Arenedisulfonates toward Catalytically Active Materials
Chemistry of Materials, 2009, 21, 655
4000980 CIFC14 H9 O10 S2 YbP -17.3843; 7.8665; 13.7366
86.119; 86.097; 86.398
792.9Gándara, Felipe; Puebla, Enrique Gutiérrez; Iglesias, Marta; Proserpio, Davide M.; Snejko, Natalia; Monge, M. Ángeles
Controlling the Structure of Arenedisulfonates toward Catalytically Active Materials
Chemistry of Materials, 2009, 21, 655
4000981 CIFC30 H40 Se2C 1 2/c 156.717; 4.1874; 11.1892
90; 94.912; 90
2647.6Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo
Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics
Chemistry of Materials, 2009, 21, 903
4000982 CIFC34 H48 Se2P 1 21/n 15.6136; 7.2956; 36.003
90; 92.881; 90
1472.6Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo
Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics
Chemistry of Materials, 2009, 21, 903
4000983 CIFC38 H56 Se2C 1 2/c 174.517; 4.4014; 10.6926
90; 94.5; 90
3496.1Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo
Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics
Chemistry of Materials, 2009, 21, 903
4000984 CIFC42 H64 Se2P 1 21/c 15.5648; 7.3316; 45.334
90; 93.289; 90
1846.5Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo
Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics
Chemistry of Materials, 2009, 21, 903
4000985 CIFB2 H8 MgP 61 2 210.354; 10.354; 37.055
90; 90; 120
3440.3Filinchuk, Yaroslav; Černý, Radovan; Hagemann, Hans
Insight into Mg(BH4)2with Synchrotron X-ray Diffraction: Structure Revision, Crystal Chemistry, and Anomalous Thermal Expansion
Chemistry of Materials, 2009, 21, 925
4000986 CIFC32 H38 Cl2 ZrP -19.146; 9.965; 17.876
103.623; 91.975; 116.457
1399.2Sun, Luyi; Liu, Jia; Kirumakki, Sharath R.; Schwerdtfeger, Eric D.; Howell, Robert J.; Al-Bahily, Khalid; Miller, Stephen A.; Clearfield, Abraham; Sue, Hung-Jue
Polypropylene Nanocomposites Based on Designed Synthetic Nanoplatelets
Chemistry of Materials, 2009, 21, 1154
4000987 CIFBi Cs Nb2 O7P 21 a m5.49945; 5.42638; 11.3846
90; 90; 90
339.74Goff, Richard J.; Keeble, Dean; Thomas, Pamela A.; Ritter, Clemens; Morrison, Finlay D.; Lightfoot, Philip
Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb2O7
Chemistry of Materials, 2009, 21, 1296

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