Crystallography Open Database

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2300545 CIFAl Ca O5 TaC 1 2/c 16.69648; 8.97659; 7.36705
90; 114.139; 90
404.121Malcherek, T.; Borowski, M.; Bosenick, A.
Structure and phase transition of Ca Ta O Al O4
Journal of Applied Crystallography, 2004, 37, 117-122
2300546 CIFN0.81 VP 42/n m c :18.115; 8.115; 8.115
90; 90; 90
534.399Onozuka, T.
Vacancy Ordering in V N1-x
Journal of Applied Crystallography, 1978, 11, 132-136
2300547 CIF
Paper
C10 H16 N6 SP 1 2/c 1 (a,2*b,c)13.817; 4.85; 18.76
90; 74.34; 90
1210.5Arakcheeva, Alla; Pattison, Philip; Bauer-Brandl, Annette; Birkedal, Henrik; Chapuis, Gervais
Cimetidine, C10H16N6S, form C: crystal structure and modelling of polytypes using the superspace approach
Journal of Applied Crystallography, 2013, 46, 99
2300548 CIFAs0.8 Pb0.2 PdP 63/m m c3.803; 3.803; 5.651
90; 90; 120
70.78Ellner, M.; Kattner, U.; Predel, B.
Kristallstrukturdaten von Pd Pb0.2 As0.8 (m).
Journal of Applied Crystallography, 1983, 16, 277-278
2300549 CIFPu SbF m -3 m6.2375; 6.2375; 6.2375
90; 90; 90
242.679Gerward, L.; Olsen, J.S.; Steenstrup, S.; Benedict, U.; Dabos-Seignon, S.
The pressure-induced transformation B1 to B2 in actinide compounds
Journal of Applied Crystallography, 1990, 23, 515-519
2300550 CIFPu TeP m -3 m3.74; 3.74; 3.74
90; 90; 90
52.314Gerward, L.; Olsen, J.S.; Dabos-Seignon, S.; Steenstrup, S.; Benedict, U.
The pressure-induced transformation B1 to B2 in actinide compounds
Journal of Applied Crystallography, 1990, 23, 515-519
2300551 CIFSe UF m -3 m5.757; 5.757; 5.757
90; 90; 90
190.805Gerward, L.; Dabos-Seignon, S.; Olsen, J.S.; Steenstrup, S.; Benedict, U.
The pressure-induced transformation B1 to B2 in actinide compounds
Journal of Applied Crystallography, 1990, 23, 515-519
2300552 CIFHg InR -3 m :H3.592; 3.592; 13.072
90; 90; 120
146.065Mascarenhas, Y.P.
X-ray diffraction studies of the Hg-In alloy system
Journal of Applied Crystallography, 1970, 3, 294-296
2300553 CIFP ThF m -3 m5.827; 5.827; 5.827
90; 90; 90
197.85Staun Olsen, J.; Gerward, L.; Benedict, U.; Vogt, O.; Luo, H.
Crystal structure and the equation of state of thorium monophosphide for pressures up to 50 GPa
Journal of Applied Crystallography, 1989, 22, 61-63
2300554 CIFHg4 PtI 4 3 26.2001; 6.2001; 6.2001
90; 90; 90
238.34Lahiri, S.K.; Angilello, J.; Natan, M.
Precise lattice parameter determination of Pt Hg4
Journal of Applied Crystallography, 1982, 15, 100-101
2300555 CIFSi V3P m -3 n4.732; 4.732; 4.732
90; 90; 90
105.958Kitchingman, W.J.; Birch, A.; Tjong, S.C.
The structure and properties of the vanadium-chromium-silicon alloys in the composition range V3 Si to Cr3 Si
Journal of Applied Crystallography, 1979, 12, 473-475
2300556 CIFCl H Ni OR -3 m :H3.26061; 3.26061; 17.00619
90; 90; 120
156.58Bette, Sebastian; Dinnebier, Robert E.; Freyer, Daniela
Structure solution and refinement of stacking-faulted NiCl(OH)
Journal of Applied Crystallography, 2015, 48
2300557 CIF
HKL
C12 H22 O11P 1 21 17.763; 8.7109; 10.8701
90; 102.937; 90
716.407Dmitrienko, Artem O.; Bushmarinov, Ivan S.
Reliable structural data from Rietveld refinements <i>via</i> restraint consistency
Journal of Applied Crystallography, 2015, 48
2300558 CIFNi SiP n m a5.1731; 3.3381; 5.6049
90; 90; 90
96.79Lord, Oliver T.; Thomson, Andrew R.; Wann, Elizabeth T. H.; Wood, Ian G.; Dobson, David P.; Vocadlo, Lidunka
The equation of state of the <i>Pmmn</i> phase of NiSi
Journal of Applied Crystallography, 2015, 48, 1914-1920
2300559 CIF
HKL
Paper
C28 H18 N2C 1 2/c 113.5559; 12.2134; 12.6643
90; 118.834; 90
1836.8Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300560 CIF
HKL
Paper
C28 H18 N2C 1 2/c 113.5537; 12.2132; 12.6619
90; 118.836; 90
1836.1Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300561 CIF
HKL
Paper
C28 H18 N2C 1 2/c 113.5559; 12.2134; 12.6643
90; 118.834; 90
1836.8Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300562 CIF
HKL
Paper
C12 H4 N4C 1 2/c 18.896; 6.913; 16.439
90; 98.29; 90
1000.4Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300563 CIF
HKL
Paper
C12 H4 N4C 1 2/c 18.884; 6.9036; 16.421
90; 98.241; 90
996.7Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300564 CIF
HKL
Paper
C12 H4 N4C 1 2/c 18.896; 6.913; 16.439
90; 98.29; 90
1000.4Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300565 CIF
HKL
Paper
C18 H17 Cu O6C 1 2/c 19.7935; 19.0055; 18.2997
90; 94.7996; 90
3394.2Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300566 CIF
HKL
Paper
C18 H17 Cu O6C 1 2/c 19.7936; 18.9973; 18.2982
90; 94.84; 90
3392.3Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300567 CIF
HKL
Paper
C18 H17 Cu O6C 1 2/c 19.7935; 19.0055; 18.2997
90; 94.7996; 90
3394.2Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300568 CIF
HKL
Paper
C34 H26 Mg N4 O4P 1 21/n 111.3068; 14.9595; 16.7252
90; 93.05; 90
2825Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300569 CIF
HKL
Paper
C34 H26 Mg N4 O4P 1 21/n 111.3182; 14.9745; 16.744
90; 93.044; 90
2833.8Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300570 CIF
HKL
Paper
C34 H26 Mg N4 O4P 1 21/n 111.3068; 14.9595; 16.7252
90; 93.05; 90
2825Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300571 CIF
HKL
Paper
C11 H10 O2 SP 21 21 215.9633; 9.0417; 18.4007
90; 90; 90
992.14Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300572 CIF
HKL
Paper
C11 H10 O2 SP 21 21 215.9641; 9.0419; 18.4027
90; 90; 90
992.4Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300573 CIF
HKL
Paper
C11 H10 O2 SP 21 21 215.9633; 9.0417; 18.4007
90; 90; 90
992.14Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300574 CIF
Paper
C26 H19 P SP -110.215; 12.322; 17.351
101.57; 91.25; 112.02
1972.2Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300575 CIF
Paper
C26 H19 P SP -110.215; 12.322; 17.351
101.57; 91.25; 112.02
1972.2Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar
An empirical correction for the influence of low-energy contamination
Journal of Applied Crystallography, 2015, 48, 1907-1913
2300576 CIF
HKL
Mo4 O23.12 Sr11I 41/a :211.6416; 11.6416; 16.4524
90; 90; 90
2229.74López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A.
High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~
Journal of Applied Crystallography, 2016, 49, 78-84
2300577 CIF
HKL
Mo4 O23.16 Sr11I 41/a :211.6696; 11.6696; 16.4869
90; 90; 90
2245.18López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A.
High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~
Journal of Applied Crystallography, 2016, 49, 78-84
2300578 CIF
HKL
Mo4 O21.84 Sr11I 41/a :211.7075; 11.7075; 16.5548
90; 90; 90
2269.09López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A.
High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~
Journal of Applied Crystallography, 2016, 49, 78-84
2300579 CIF
HKL
Mo4 O21.92 Sr11I 41/a :211.7466; 11.7466; 16.6088
90; 90; 90
2291.73López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A.
High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~
Journal of Applied Crystallography, 2016, 49, 78-84
2300580 CIFD V2C 1 m 14.46; 3; 4.46
90; 95.5; 90
59.4Westlake, D.G.; Mueller, M.H.; Knott, H.W.
Structural transitions at low temperature in vanadium deuterides of the Ti-V-H system
Journal of Applied Crystallography, 1973, 6, 206-216
2300581 CIFD0.96 V2I m -3 m3.14; 3.14; 3.14
90; 90; 90
30.959Westlake, D.G.; Mueller, M.H.; Knott, H.W.
Structural transitions at low temperature in vanadium deuterides of the Ti-V-H system
Journal of Applied Crystallography, 1973, 6, 206-216
2300582 CIFCd3 H5 N O8P m m n :23.4203; 10.0292; 11.0295
90; 90; 90
378.344Plevert, J.; Louer, D.; Louer, M.
The Ab Initio Structure Determination of Cd3 (O H)5 N O3 from X-ray Powder Diffraction Data
Journal of Applied Crystallography, 1989, 22, 470-475
2300583 CIFFe2 Mn0.4 O4 Zn0.6F d -3 m :18.4794; 8.4794; 8.4794
90; 90; 90
609.671Koenig, U.; Chol, G.
Roentgenbeugungs- und Neutronenbeugungsuntersuchungen an Ferriten der Reihe Mnx Zn1-x Fe2 O4
Journal of Applied Crystallography, 1968, 1, 124-126
2300584 CIFFe2 Mn0.6 O4 Zn0.4F d -3 m :18.4975; 8.4975; 8.4975
90; 90; 90
613.583Koenig, U.; Chol, G.
Roentgenbeugungs- und Neutronenbeugungsuntersuchungen an Ferriten der Reihe Mnx Zn1-x Fe2 O4
Journal of Applied Crystallography, 1968, 1, 124-126
2300585 CIFFe2 Mn O4F d -3 m :18.511; 8.511; 8.511
90; 90; 90
616.512Koenig, U.; Chol, G.
Roentgenbeugungs- und Neutronenbeugungsuntersuchungen an Ferriten der Reihe Mnx Zn1-x Fe2 O4
Journal of Applied Crystallography, 1968, 1, 124-126
2300586 CIFO6 Pb2 Sc TaR 3 :R8.15231; 8.15231; 8.15231
89.8488; 89.8488; 89.8488
541.798Woodward, P.M.; Baba-Kishi, K.Z.
Crystal structures of the relaxor oxide Pb2 (Sc Ta) O6 in the paraelectric and ferroelectric states
Journal of Applied Crystallography, 2002, 35, 233-242
2300587 CIFCa9.2 O22.2P 63/m9.3653; 9.3653; 6.8816
90; 90; 120
522.713Young, R.A.; Mackie, P.E.; von Dreele, R.B.
Application of the Pattern-Fitting Structure-Refinement Method to X-ray Powder Diffractometer Patterns
Journal of Applied Crystallography, 1977, 10, 262-269
2300588 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6769; 10.6769; 24.6539
90; 90; 120
2433.9Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300589 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6769; 10.6769; 24.6539
90; 90; 120
2433.9Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300590 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6769; 10.6769; 24.6539
90; 90; 120
2433.9Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300591 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6769; 10.6769; 24.6539
90; 90; 120
2433.9Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300592 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6712; 10.6712; 24.6546
90; 90; 120
2431.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300593 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6712; 10.6712; 24.6546
90; 90; 120
2431.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300594 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6712; 10.6712; 24.6546
90; 90; 120
2431.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300595 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6712; 10.6712; 24.6546
90; 90; 120
2431.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300596 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6434; 10.6434; 24.6108
90; 90; 120
2414.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300597 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6434; 10.6434; 24.6108
90; 90; 120
2414.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300598 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6434; 10.6434; 24.6108
90; 90; 120
2414.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300599 CIF
HKL
C96 H126 Mg3 N36R -3 :H10.6434; 10.6434; 24.6108
90; 90; 120
2414.4Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300600 CIF
HKL
C26 H19 P SP -110.225; 12.336; 17.371
101.58; 91.21; 111.99
1979.1Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300601 CIF
HKL
C26 H19 P SP -110.225; 12.336; 17.371
101.58; 91.21; 111.99
1979.1Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300602 CIF
HKL
C26 H19 P SP -110.225; 12.336; 17.371
101.58; 91.21; 111.99
1979.1Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300603 CIF
HKL
C26 H19 P SP -110.225; 12.336; 17.371
101.58; 91.21; 111.99
1979.1Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300604 CIF
HKL
C26 H19 P SP -110.223; 12.326; 17.357
101.55; 91.23; 112.05
1974.8Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300605 CIF
HKL
C26 H19 P SP -110.223; 12.326; 17.357
101.55; 91.23; 112.05
1974.8Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300606 CIF
HKL
C26 H19 P SP -110.223; 12.326; 17.357
101.55; 91.23; 112.05
1974.8Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300607 CIF
HKL
C26 H19 P SP -110.223; 12.326; 17.357
101.55; 91.23; 112.05
1974.8Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300608 CIF
HKL
C26 H19 P SP -110.213; 12.29; 17.335
101.62; 91.37; 112.09
1962.9Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300609 CIF
HKL
C26 H19 P SP -110.213; 12.29; 17.335
101.62; 91.37; 112.09
1962.9Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300610 CIF
HKL
C26 H19 P SP -110.213; 12.29; 17.335
101.62; 91.37; 112.09
1962.9Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar
Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering
Journal of Applied Crystallography, 2015, 48, 1485-1497
2300611 CIFCe0.12 O2 Zr0.82P 42/n m c :13.64195; 3.64195; 5.24403
90; 90; 90
69.556Lutterotti, L.; Scardi, P.
Simultaneous Structure and Size-Strain Refinement by the Rietveld Method
Journal of Applied Crystallography, 1990, 23, 246-252
2300612 CIFO2 ZrP 42/n m c :13.5961; 3.5961; 5.177
90; 90; 90
66.949Lutterotti, L.; Scardi, P.
Simultaneous Structure and Size-Strain Refinement by the Rietveld Method
Journal of Applied Crystallography, 1990, 23, 246-252
2300613 CIF
HKL
B6 Br K3 O10R 3 m :H10.1252; 10.1252; 8.8687
90; 90; 120
787.4Xia, Mingjun; Xu, Bo; Liu, Lijuan; Wang, Xiaoyang; Li, Rukang; Chen, Chuangtian
Thermo-physical properties of nonlinear optical crystal K~3~B~6~O~10~Br
Journal of Applied Crystallography, 2016, 49, 539-543
2300614 CIF
HKL
Ba2 Co Ge2 O7P -4 21 m8.392; 8.392; 5.561
90; 90; 90
391.64Sazonov, Andrew; Meven, Martin; Roth, Georg; Georgii, Robert; Kézsmárki, István; Kocsis, Vilmos; Tokunaga, Yusuke; Taguchi, Yasujiro; Tokura, Yoshinori; Hutanu, Vladimir
Origin of forbidden reflections in multiferroic Ba~2~CoGe~2~O~7~ by neutron diffraction: symmetry lowering or Renninger effect?
Journal of Applied Crystallography, 2016, 49, 556-560
2300615 CIF
HKL
Paper
Fe2 O4 ZnF d -3 m :28.391; 8.391; 8.391
90; 90; 90
590.8Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep
Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route
Journal of Applied Crystallography, 2014, 47, 414-420
2300616 CIF
HKL
Paper
Fe3 O4F d -3 m :28.3582; 8.3582; 8.3582
90; 90; 90
583.9Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep
Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route
Journal of Applied Crystallography, 2014, 47, 414-420
2300617 CIF
Paper
Fe2 O3P 43 3 28.3364; 8.3364; 8.3364
90; 90; 90
579.34Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep
Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route
Journal of Applied Crystallography, 2014, 47, 414-420
2300618 CIF
HKL
Paper
Fe2 Mn O4F d -3 m :28.3711; 8.3711; 8.3711
90; 90; 90
586.61Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep
Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route
Journal of Applied Crystallography, 2014, 47, 414-420
2300619 CIF
HKL
Mn SiP 21 34.5622; 4.5622; 4.5622
90; 90; 90
94.956Dyadkin, Vadim; Wright, Jon; Pattison, Philip; Chernyshov, Dmitry
Probing structural chirality with high-energy synchrotron radiation
Journal of Applied Crystallography, 2016, 49, 918-922
2300620 CIF
HKL
Mn SiP 21 34.5662; 4.5662; 4.5662
90; 90; 90
95.206Dyadkin, Vadim; Wright, Jon; Pattison, Philip; Chernyshov, Dmitry
Probing structural chirality with high-energy synchrotron radiation
Journal of Applied Crystallography, 2016, 49, 918-922
2300621 CIF
HKL
Co0.3 Fe0.7 SiP 21 34.4732; 4.4732; 4.4732
90; 90; 90
89.507Dyadkin, Vadim; Wright, Jon; Pattison, Philip; Chernyshov, Dmitry
Probing structural chirality with high-energy synchrotron radiation
Journal of Applied Crystallography, 2016, 49, 918-922
2300622 CIF
HKL
Mn1.52 Ni2 Sn0.48P m m a8.6068; 5.6226; 4.3728
90; 90; 90
211.611Lin, Chunqing; Yan, Haile; Zhang, Yudong; Esling, Claude; Zhao, Xiang; Zuo, Liang
Crystal structure of modulated martensite and crystallographic correlations between martensite variants of Ni~50~Mn~38~Sn~12~ alloy
Journal of Applied Crystallography, 2016, 49, 1276-1283
2300623 CIF
HKL
Paper
C6 H16 Br NP 21 21 217.9986; 8.2984; 13.55
90; 90; 90
899.39Yadav, Harsh; Sinha, Nidhi; Goel, Sahil; Hussain, Abid; Kumar, Binay
Growth and structural and physical properties of diisopropylammonium bromide molecular single crystals
Journal of Applied Crystallography, 2016, 49, 2053-2062
2300624 CIF
HKL
Paper
C32 H39 Cl N2 O6C 1 c 111.6771; 29.1114; 9.36146
90; 109.21; 90
3005.11Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan
<i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing
Journal of Applied Crystallography, 2016, 49, 2172-2183
2300625 CIF
HKL
Paper
C32 H36 Cl N O5P 1 21/c 115.64921; 19.57407; 9.67099
90; 102.129; 90
2896.28Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan
<i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing
Journal of Applied Crystallography, 2016, 49, 2172-2183
2300626 CIF
HKL
Paper
C28 H36 Cl N O4P 1 21/n 114.912; 9.4993; 19.407
90; 112.594; 90
2538.1Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan
<i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing
Journal of Applied Crystallography, 2016, 49, 2172-2183
2300627 CIF
HKL
Paper
C32 H36 N2 O7 SP 1 21/c 114.2061; 12.6581; 17.5097
90; 113.36; 90
2890.55Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan
<i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing
Journal of Applied Crystallography, 2016, 49, 2172-2183
2300628 CIF
HKL
Paper
C32 H36 N2 O7 SP 1 21/c 113.2637; 12.7583; 17.5667
90; 107.448; 90
2835.9Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan
<i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing
Journal of Applied Crystallography, 2016, 49, 2172-2183
2300629 CIF
HKL
Paper
C2 H10 N2 O4 SeP 43 21 26.1352; 6.1352; 18.1726
90; 90; 90
684.03Martin, Alexander T.; Nichols, Shane M.; Li, Sichao; Tan, Melissa; Kahr, Bart
Double cone of eigendirections in optically active ethylenediammonium selenate crystals
Journal of Applied Crystallography, 2017, 50, 1117-1124
2300630 CIFSe2 SnP -3 m 13.8108; 3.8108; 6.141
90; 90; 120
77.233Palosz, B.; Salje, E.
Lattice parameters and spontaneous strain in A X2 polytypes: Cd I2, Pb I2, Sn, S2 and SnSe2
Journal of Applied Crystallography, 1989, 22, 622-623
2300631 CIF
HKL
Paper
B H4 LiP n m a7.1374; 4.4172; 6.7029
90; 90; 90
211.32Solar, Michael; Trapp, Nils
μCHILL: a lightweight, modular system for handling crystalline samples at low temperatures under inert conditions
Journal of Applied Crystallography, 2018, 51
2300632 CIF
HKL
B H4 LiP n m a7.1431; 4.4159; 6.7027
90; 90; 90
211.42Solar, Michael; Trapp, Nils
μCHILL: a lightweight, modular system for handling crystalline samples at low temperatures under inert conditions
Journal of Applied Crystallography, 2018, 51
2300633 CIF
HKL
Paper
Fe4 Mn Si3P 63/m c m6.8; 6.8; 4.75
90; 90; 120
190.2Grzechnik, Andrzej; Meven, Martin; Friese, Karen
Single-crystal neutron diffraction in diamond anvil cells with hot neutrons
Journal of Applied Crystallography, 2018, 51, 351-356
2300634 CIF
HKL
F Fe O3 SeP 1 21/n 14.956; 5.202; 12.04
90; 97.87; 90
307.48Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300635 CIF
HKL
F Fe O3 SeP 1 21/n 14.956; 5.202; 12.04
90; 97.87; 90
307.48Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300636 CIF
HKL
F Fe O3 SeP 1 21/n 14.956; 5.202; 12.04
90; 97.87; 90
307.48Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300637 CIF
HKL
F Fe O3 SeP 1 21/n 14.956; 5.202; 12.04
90; 97.87; 90
307.48Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300638 CIF
HKL
F Fe O3 SeP 1 21/n 14.956; 5.202; 12.04
90; 97.87; 90
307.48Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300639 CIF
HKL
F Fe O3 SeP 1 21/n 14.956; 5.202; 12.04
90; 97.87; 90
307.48Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300640 CIF
HKL
O24 Si12P n m a20.022; 19.899; 13.383
90; 90; 90
5332Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300641 CIF
HKL
O24 Si12P n m a20.022; 19.899; 13.383
90; 90; 90
5332Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300642 CIF
HKL
O192 Si96P n m a20.022; 19.899; 13.383
90; 90; 90
5332Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300643 CIF
HKL
O24 Si12P n m a20.022; 19.899; 13.383
90; 90; 90
5332Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei
On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds
Journal of Applied Crystallography, 2018, 51
2300644 CIF
HKL
O96 Si48C m c m18.11; 20.53; 7.528
90; 90; 90
2798.9Cichocka, Magdalena Ola; Ångström, Jonas; Wang, Bin; Zou, Xiaodong; Smeets, Stef
High-throughput continuous rotation electron diffraction data acquisition <i>via</i> software automation
Journal of Applied Crystallography, 2018, 51

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