Crystallography Open Database
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Searching journal of publication like 'Journal of applied crystallography'
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2300545 | CIF | Al Ca O5 Ta | C 1 2/c 1 | 6.69648; 8.97659; 7.36705 90; 114.139; 90 | 404.121 | Malcherek, T.; Borowski, M.; Bosenick, A. Structure and phase transition of Ca Ta O Al O4 Journal of Applied Crystallography, 2004, 37, 117-122 |
2300546 | CIF | N0.81 V | P 42/n m c :1 | 8.115; 8.115; 8.115 90; 90; 90 | 534.399 | Onozuka, T. Vacancy Ordering in V N1-x Journal of Applied Crystallography, 1978, 11, 132-136 |
2300547 | CIF Paper | C10 H16 N6 S | P 1 2/c 1 (a,2*b,c) | 13.817; 4.85; 18.76 90; 74.34; 90 | 1210.5 | Arakcheeva, Alla; Pattison, Philip; Bauer-Brandl, Annette; Birkedal, Henrik; Chapuis, Gervais Cimetidine, C10H16N6S, form C: crystal structure and modelling of polytypes using the superspace approach Journal of Applied Crystallography, 2013, 46, 99 |
2300548 | CIF | As0.8 Pb0.2 Pd | P 63/m m c | 3.803; 3.803; 5.651 90; 90; 120 | 70.78 | Ellner, M.; Kattner, U.; Predel, B. Kristallstrukturdaten von Pd Pb0.2 As0.8 (m). Journal of Applied Crystallography, 1983, 16, 277-278 |
2300549 | CIF | Pu Sb | F m -3 m | 6.2375; 6.2375; 6.2375 90; 90; 90 | 242.679 | Gerward, L.; Olsen, J.S.; Steenstrup, S.; Benedict, U.; Dabos-Seignon, S. The pressure-induced transformation B1 to B2 in actinide compounds Journal of Applied Crystallography, 1990, 23, 515-519 |
2300550 | CIF | Pu Te | P m -3 m | 3.74; 3.74; 3.74 90; 90; 90 | 52.314 | Gerward, L.; Olsen, J.S.; Dabos-Seignon, S.; Steenstrup, S.; Benedict, U. The pressure-induced transformation B1 to B2 in actinide compounds Journal of Applied Crystallography, 1990, 23, 515-519 |
2300551 | CIF | Se U | F m -3 m | 5.757; 5.757; 5.757 90; 90; 90 | 190.805 | Gerward, L.; Dabos-Seignon, S.; Olsen, J.S.; Steenstrup, S.; Benedict, U. The pressure-induced transformation B1 to B2 in actinide compounds Journal of Applied Crystallography, 1990, 23, 515-519 |
2300552 | CIF | Hg In | R -3 m :H | 3.592; 3.592; 13.072 90; 90; 120 | 146.065 | Mascarenhas, Y.P. X-ray diffraction studies of the Hg-In alloy system Journal of Applied Crystallography, 1970, 3, 294-296 |
2300553 | CIF | P Th | F m -3 m | 5.827; 5.827; 5.827 90; 90; 90 | 197.85 | Staun Olsen, J.; Gerward, L.; Benedict, U.; Vogt, O.; Luo, H. Crystal structure and the equation of state of thorium monophosphide for pressures up to 50 GPa Journal of Applied Crystallography, 1989, 22, 61-63 |
2300554 | CIF | Hg4 Pt | I 4 3 2 | 6.2001; 6.2001; 6.2001 90; 90; 90 | 238.34 | Lahiri, S.K.; Angilello, J.; Natan, M. Precise lattice parameter determination of Pt Hg4 Journal of Applied Crystallography, 1982, 15, 100-101 |
2300555 | CIF | Si V3 | P m -3 n | 4.732; 4.732; 4.732 90; 90; 90 | 105.958 | Kitchingman, W.J.; Birch, A.; Tjong, S.C. The structure and properties of the vanadium-chromium-silicon alloys in the composition range V3 Si to Cr3 Si Journal of Applied Crystallography, 1979, 12, 473-475 |
2300556 | CIF | Cl H Ni O | R -3 m :H | 3.26061; 3.26061; 17.00619 90; 90; 120 | 156.58 | Bette, Sebastian; Dinnebier, Robert E.; Freyer, Daniela Structure solution and refinement of stacking-faulted NiCl(OH) Journal of Applied Crystallography, 2015, 48 |
2300557 | CIF HKL | C12 H22 O11 | P 1 21 1 | 7.763; 8.7109; 10.8701 90; 102.937; 90 | 716.407 | Dmitrienko, Artem O.; Bushmarinov, Ivan S. Reliable structural data from Rietveld refinements <i>via</i> restraint consistency Journal of Applied Crystallography, 2015, 48 |
2300558 | CIF | Ni Si | P n m a | 5.1731; 3.3381; 5.6049 90; 90; 90 | 96.79 | Lord, Oliver T.; Thomson, Andrew R.; Wann, Elizabeth T. H.; Wood, Ian G.; Dobson, David P.; Vocadlo, Lidunka The equation of state of the <i>Pmmn</i> phase of NiSi Journal of Applied Crystallography, 2015, 48, 1914-1920 |
2300559 | CIF HKL Paper | C28 H18 N2 | C 1 2/c 1 | 13.5559; 12.2134; 12.6643 90; 118.834; 90 | 1836.8 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300560 | CIF HKL Paper | C28 H18 N2 | C 1 2/c 1 | 13.5537; 12.2132; 12.6619 90; 118.836; 90 | 1836.1 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300561 | CIF HKL Paper | C28 H18 N2 | C 1 2/c 1 | 13.5559; 12.2134; 12.6643 90; 118.834; 90 | 1836.8 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300562 | CIF HKL Paper | C12 H4 N4 | C 1 2/c 1 | 8.896; 6.913; 16.439 90; 98.29; 90 | 1000.4 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300563 | CIF HKL Paper | C12 H4 N4 | C 1 2/c 1 | 8.884; 6.9036; 16.421 90; 98.241; 90 | 996.7 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300564 | CIF HKL Paper | C12 H4 N4 | C 1 2/c 1 | 8.896; 6.913; 16.439 90; 98.29; 90 | 1000.4 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300565 | CIF HKL Paper | C18 H17 Cu O6 | C 1 2/c 1 | 9.7935; 19.0055; 18.2997 90; 94.7996; 90 | 3394.2 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300566 | CIF HKL Paper | C18 H17 Cu O6 | C 1 2/c 1 | 9.7936; 18.9973; 18.2982 90; 94.84; 90 | 3392.3 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300567 | CIF HKL Paper | C18 H17 Cu O6 | C 1 2/c 1 | 9.7935; 19.0055; 18.2997 90; 94.7996; 90 | 3394.2 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300568 | CIF HKL Paper | C34 H26 Mg N4 O4 | P 1 21/n 1 | 11.3068; 14.9595; 16.7252 90; 93.05; 90 | 2825 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300569 | CIF HKL Paper | C34 H26 Mg N4 O4 | P 1 21/n 1 | 11.3182; 14.9745; 16.744 90; 93.044; 90 | 2833.8 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300570 | CIF HKL Paper | C34 H26 Mg N4 O4 | P 1 21/n 1 | 11.3068; 14.9595; 16.7252 90; 93.05; 90 | 2825 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300571 | CIF HKL Paper | C11 H10 O2 S | P 21 21 21 | 5.9633; 9.0417; 18.4007 90; 90; 90 | 992.14 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300572 | CIF HKL Paper | C11 H10 O2 S | P 21 21 21 | 5.9641; 9.0419; 18.4027 90; 90; 90 | 992.4 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300573 | CIF HKL Paper | C11 H10 O2 S | P 21 21 21 | 5.9633; 9.0417; 18.4007 90; 90; 90 | 992.14 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300574 | CIF Paper | C26 H19 P S | P -1 | 10.215; 12.322; 17.351 101.57; 91.25; 112.02 | 1972.2 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300575 | CIF Paper | C26 H19 P S | P -1 | 10.215; 12.322; 17.351 101.57; 91.25; 112.02 | 1972.2 | Krause, Lennard; Herbst-Irmer, Regine; Stalke, Dietmar An empirical correction for the influence of low-energy contamination Journal of Applied Crystallography, 2015, 48, 1907-1913 |
2300576 | CIF HKL | Mo4 O23.12 Sr11 | I 41/a :2 | 11.6416; 11.6416; 16.4524 90; 90; 90 | 2229.74 | López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A. High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~ Journal of Applied Crystallography, 2016, 49, 78-84 |
2300577 | CIF HKL | Mo4 O23.16 Sr11 | I 41/a :2 | 11.6696; 11.6696; 16.4869 90; 90; 90 | 2245.18 | López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A. High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~ Journal of Applied Crystallography, 2016, 49, 78-84 |
2300578 | CIF HKL | Mo4 O21.84 Sr11 | I 41/a :2 | 11.7075; 11.7075; 16.5548 90; 90; 90 | 2269.09 | López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A. High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~ Journal of Applied Crystallography, 2016, 49, 78-84 |
2300579 | CIF HKL | Mo4 O21.92 Sr11 | I 41/a :2 | 11.7466; 11.7466; 16.6088 90; 90; 90 | 2291.73 | López, Carlos A.; Pedregosa, José C.; Fernández-Díaz, María T.; Alonso, José A. High-temperature dynamic octahedral tilting in the ionic conductor Sr~11~Mo~4~O~23~ Journal of Applied Crystallography, 2016, 49, 78-84 |
2300580 | CIF | D V2 | C 1 m 1 | 4.46; 3; 4.46 90; 95.5; 90 | 59.4 | Westlake, D.G.; Mueller, M.H.; Knott, H.W. Structural transitions at low temperature in vanadium deuterides of the Ti-V-H system Journal of Applied Crystallography, 1973, 6, 206-216 |
2300581 | CIF | D0.96 V2 | I m -3 m | 3.14; 3.14; 3.14 90; 90; 90 | 30.959 | Westlake, D.G.; Mueller, M.H.; Knott, H.W. Structural transitions at low temperature in vanadium deuterides of the Ti-V-H system Journal of Applied Crystallography, 1973, 6, 206-216 |
2300582 | CIF | Cd3 H5 N O8 | P m m n :2 | 3.4203; 10.0292; 11.0295 90; 90; 90 | 378.344 | Plevert, J.; Louer, D.; Louer, M. The Ab Initio Structure Determination of Cd3 (O H)5 N O3 from X-ray Powder Diffraction Data Journal of Applied Crystallography, 1989, 22, 470-475 |
2300583 | CIF | Fe2 Mn0.4 O4 Zn0.6 | F d -3 m :1 | 8.4794; 8.4794; 8.4794 90; 90; 90 | 609.671 | Koenig, U.; Chol, G. Roentgenbeugungs- und Neutronenbeugungsuntersuchungen an Ferriten der Reihe Mnx Zn1-x Fe2 O4 Journal of Applied Crystallography, 1968, 1, 124-126 |
2300584 | CIF | Fe2 Mn0.6 O4 Zn0.4 | F d -3 m :1 | 8.4975; 8.4975; 8.4975 90; 90; 90 | 613.583 | Koenig, U.; Chol, G. Roentgenbeugungs- und Neutronenbeugungsuntersuchungen an Ferriten der Reihe Mnx Zn1-x Fe2 O4 Journal of Applied Crystallography, 1968, 1, 124-126 |
2300585 | CIF | Fe2 Mn O4 | F d -3 m :1 | 8.511; 8.511; 8.511 90; 90; 90 | 616.512 | Koenig, U.; Chol, G. Roentgenbeugungs- und Neutronenbeugungsuntersuchungen an Ferriten der Reihe Mnx Zn1-x Fe2 O4 Journal of Applied Crystallography, 1968, 1, 124-126 |
2300586 | CIF | O6 Pb2 Sc Ta | R 3 :R | 8.15231; 8.15231; 8.15231 89.8488; 89.8488; 89.8488 | 541.798 | Woodward, P.M.; Baba-Kishi, K.Z. Crystal structures of the relaxor oxide Pb2 (Sc Ta) O6 in the paraelectric and ferroelectric states Journal of Applied Crystallography, 2002, 35, 233-242 |
2300587 | CIF | Ca9.2 O22.2 | P 63/m | 9.3653; 9.3653; 6.8816 90; 90; 120 | 522.713 | Young, R.A.; Mackie, P.E.; von Dreele, R.B. Application of the Pattern-Fitting Structure-Refinement Method to X-ray Powder Diffractometer Patterns Journal of Applied Crystallography, 1977, 10, 262-269 |
2300588 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6769; 10.6769; 24.6539 90; 90; 120 | 2433.9 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300589 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6769; 10.6769; 24.6539 90; 90; 120 | 2433.9 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300590 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6769; 10.6769; 24.6539 90; 90; 120 | 2433.9 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300591 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6769; 10.6769; 24.6539 90; 90; 120 | 2433.9 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300592 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6712; 10.6712; 24.6546 90; 90; 120 | 2431.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300593 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6712; 10.6712; 24.6546 90; 90; 120 | 2431.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300594 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6712; 10.6712; 24.6546 90; 90; 120 | 2431.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300595 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6712; 10.6712; 24.6546 90; 90; 120 | 2431.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300596 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6434; 10.6434; 24.6108 90; 90; 120 | 2414.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300597 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6434; 10.6434; 24.6108 90; 90; 120 | 2414.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300598 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6434; 10.6434; 24.6108 90; 90; 120 | 2414.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300599 | CIF HKL | C96 H126 Mg3 N36 | R -3 :H | 10.6434; 10.6434; 24.6108 90; 90; 120 | 2414.4 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300600 | CIF HKL | C26 H19 P S | P -1 | 10.225; 12.336; 17.371 101.58; 91.21; 111.99 | 1979.1 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300601 | CIF HKL | C26 H19 P S | P -1 | 10.225; 12.336; 17.371 101.58; 91.21; 111.99 | 1979.1 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300602 | CIF HKL | C26 H19 P S | P -1 | 10.225; 12.336; 17.371 101.58; 91.21; 111.99 | 1979.1 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300603 | CIF HKL | C26 H19 P S | P -1 | 10.225; 12.336; 17.371 101.58; 91.21; 111.99 | 1979.1 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300604 | CIF HKL | C26 H19 P S | P -1 | 10.223; 12.326; 17.357 101.55; 91.23; 112.05 | 1974.8 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300605 | CIF HKL | C26 H19 P S | P -1 | 10.223; 12.326; 17.357 101.55; 91.23; 112.05 | 1974.8 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300606 | CIF HKL | C26 H19 P S | P -1 | 10.223; 12.326; 17.357 101.55; 91.23; 112.05 | 1974.8 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300607 | CIF HKL | C26 H19 P S | P -1 | 10.223; 12.326; 17.357 101.55; 91.23; 112.05 | 1974.8 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300608 | CIF HKL | C26 H19 P S | P -1 | 10.213; 12.29; 17.335 101.62; 91.37; 112.09 | 1962.9 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300609 | CIF HKL | C26 H19 P S | P -1 | 10.213; 12.29; 17.335 101.62; 91.37; 112.09 | 1962.9 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300610 | CIF HKL | C26 H19 P S | P -1 | 10.213; 12.29; 17.335 101.62; 91.37; 112.09 | 1962.9 | Niepötter, Benedikt; Herbst-Irmer, Regine; Stalke, Dietmar Empirical correction for resolution- and temperature-dependent errors caused by factors such as thermal diffuse scattering Journal of Applied Crystallography, 2015, 48, 1485-1497 |
2300611 | CIF | Ce0.12 O2 Zr0.82 | P 42/n m c :1 | 3.64195; 3.64195; 5.24403 90; 90; 90 | 69.556 | Lutterotti, L.; Scardi, P. Simultaneous Structure and Size-Strain Refinement by the Rietveld Method Journal of Applied Crystallography, 1990, 23, 246-252 |
2300612 | CIF | O2 Zr | P 42/n m c :1 | 3.5961; 3.5961; 5.177 90; 90; 90 | 66.949 | Lutterotti, L.; Scardi, P. Simultaneous Structure and Size-Strain Refinement by the Rietveld Method Journal of Applied Crystallography, 1990, 23, 246-252 |
2300613 | CIF HKL | B6 Br K3 O10 | R 3 m :H | 10.1252; 10.1252; 8.8687 90; 90; 120 | 787.4 | Xia, Mingjun; Xu, Bo; Liu, Lijuan; Wang, Xiaoyang; Li, Rukang; Chen, Chuangtian Thermo-physical properties of nonlinear optical crystal K~3~B~6~O~10~Br Journal of Applied Crystallography, 2016, 49, 539-543 |
2300614 | CIF HKL | Ba2 Co Ge2 O7 | P -4 21 m | 8.392; 8.392; 5.561 90; 90; 90 | 391.64 | Sazonov, Andrew; Meven, Martin; Roth, Georg; Georgii, Robert; Kézsmárki, István; Kocsis, Vilmos; Tokunaga, Yusuke; Taguchi, Yasujiro; Tokura, Yoshinori; Hutanu, Vladimir Origin of forbidden reflections in multiferroic Ba~2~CoGe~2~O~7~ by neutron diffraction: symmetry lowering or Renninger effect? Journal of Applied Crystallography, 2016, 49, 556-560 |
2300615 | CIF HKL Paper | Fe2 O4 Zn | F d -3 m :2 | 8.391; 8.391; 8.391 90; 90; 90 | 590.8 | Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route Journal of Applied Crystallography, 2014, 47, 414-420 |
2300616 | CIF HKL Paper | Fe3 O4 | F d -3 m :2 | 8.3582; 8.3582; 8.3582 90; 90; 90 | 583.9 | Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route Journal of Applied Crystallography, 2014, 47, 414-420 |
2300617 | CIF Paper | Fe2 O3 | P 43 3 2 | 8.3364; 8.3364; 8.3364 90; 90; 90 | 579.34 | Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route Journal of Applied Crystallography, 2014, 47, 414-420 |
2300618 | CIF HKL Paper | Fe2 Mn O4 | F d -3 m :2 | 8.3711; 8.3711; 8.3711 90; 90; 90 | 586.61 | Solano, Eduardo; Frontera, Carlos; Puig, Teresa; Obradors, Xavier; Ricart, Susagna; Ros, Josep Neutron and X-ray diffraction study of ferrite nanocrystals obtained by microwave-assisted growth. A structural comparison with the thermal synthetic route Journal of Applied Crystallography, 2014, 47, 414-420 |
2300619 | CIF HKL | Mn Si | P 21 3 | 4.5622; 4.5622; 4.5622 90; 90; 90 | 94.956 | Dyadkin, Vadim; Wright, Jon; Pattison, Philip; Chernyshov, Dmitry Probing structural chirality with high-energy synchrotron radiation Journal of Applied Crystallography, 2016, 49, 918-922 |
2300620 | CIF HKL | Mn Si | P 21 3 | 4.5662; 4.5662; 4.5662 90; 90; 90 | 95.206 | Dyadkin, Vadim; Wright, Jon; Pattison, Philip; Chernyshov, Dmitry Probing structural chirality with high-energy synchrotron radiation Journal of Applied Crystallography, 2016, 49, 918-922 |
2300621 | CIF HKL | Co0.3 Fe0.7 Si | P 21 3 | 4.4732; 4.4732; 4.4732 90; 90; 90 | 89.507 | Dyadkin, Vadim; Wright, Jon; Pattison, Philip; Chernyshov, Dmitry Probing structural chirality with high-energy synchrotron radiation Journal of Applied Crystallography, 2016, 49, 918-922 |
2300622 | CIF HKL | Mn1.52 Ni2 Sn0.48 | P m m a | 8.6068; 5.6226; 4.3728 90; 90; 90 | 211.611 | Lin, Chunqing; Yan, Haile; Zhang, Yudong; Esling, Claude; Zhao, Xiang; Zuo, Liang Crystal structure of modulated martensite and crystallographic correlations between martensite variants of Ni~50~Mn~38~Sn~12~ alloy Journal of Applied Crystallography, 2016, 49, 1276-1283 |
2300623 | CIF HKL Paper | C6 H16 Br N | P 21 21 21 | 7.9986; 8.2984; 13.55 90; 90; 90 | 899.39 | Yadav, Harsh; Sinha, Nidhi; Goel, Sahil; Hussain, Abid; Kumar, Binay Growth and structural and physical properties of diisopropylammonium bromide molecular single crystals Journal of Applied Crystallography, 2016, 49, 2053-2062 |
2300624 | CIF HKL Paper | C32 H39 Cl N2 O6 | C 1 c 1 | 11.6771; 29.1114; 9.36146 90; 109.21; 90 | 3005.11 | Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan <i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing Journal of Applied Crystallography, 2016, 49, 2172-2183 |
2300625 | CIF HKL Paper | C32 H36 Cl N O5 | P 1 21/c 1 | 15.64921; 19.57407; 9.67099 90; 102.129; 90 | 2896.28 | Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan <i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing Journal of Applied Crystallography, 2016, 49, 2172-2183 |
2300626 | CIF HKL Paper | C28 H36 Cl N O4 | P 1 21/n 1 | 14.912; 9.4993; 19.407 90; 112.594; 90 | 2538.1 | Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan <i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing Journal of Applied Crystallography, 2016, 49, 2172-2183 |
2300627 | CIF HKL Paper | C32 H36 N2 O7 S | P 1 21/c 1 | 14.2061; 12.6581; 17.5097 90; 113.36; 90 | 2890.55 | Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan <i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing Journal of Applied Crystallography, 2016, 49, 2172-2183 |
2300628 | CIF HKL Paper | C32 H36 N2 O7 S | P 1 21/c 1 | 13.2637; 12.7583; 17.5667 90; 107.448; 90 | 2835.9 | Rohlíček, Jan; Skořepová, Eliška; Babor, Martin; Čejka, Jan <i>CrystalCMP</i>: an easy-to-use tool for fast comparison of molecular packing Journal of Applied Crystallography, 2016, 49, 2172-2183 |
2300629 | CIF HKL Paper | C2 H10 N2 O4 Se | P 43 21 2 | 6.1352; 6.1352; 18.1726 90; 90; 90 | 684.03 | Martin, Alexander T.; Nichols, Shane M.; Li, Sichao; Tan, Melissa; Kahr, Bart Double cone of eigendirections in optically active ethylenediammonium selenate crystals Journal of Applied Crystallography, 2017, 50, 1117-1124 |
2300630 | CIF | Se2 Sn | P -3 m 1 | 3.8108; 3.8108; 6.141 90; 90; 120 | 77.233 | Palosz, B.; Salje, E. Lattice parameters and spontaneous strain in A X2 polytypes: Cd I2, Pb I2, Sn, S2 and SnSe2 Journal of Applied Crystallography, 1989, 22, 622-623 |
2300631 | CIF HKL Paper | B H4 Li | P n m a | 7.1374; 4.4172; 6.7029 90; 90; 90 | 211.32 | Solar, Michael; Trapp, Nils μCHILL: a lightweight, modular system for handling crystalline samples at low temperatures under inert conditions Journal of Applied Crystallography, 2018, 51 |
2300632 | CIF HKL | B H4 Li | P n m a | 7.1431; 4.4159; 6.7027 90; 90; 90 | 211.42 | Solar, Michael; Trapp, Nils μCHILL: a lightweight, modular system for handling crystalline samples at low temperatures under inert conditions Journal of Applied Crystallography, 2018, 51 |
2300633 | CIF HKL Paper | Fe4 Mn Si3 | P 63/m c m | 6.8; 6.8; 4.75 90; 90; 120 | 190.2 | Grzechnik, Andrzej; Meven, Martin; Friese, Karen Single-crystal neutron diffraction in diamond anvil cells with hot neutrons Journal of Applied Crystallography, 2018, 51, 351-356 |
2300634 | CIF HKL | F Fe O3 Se | P 1 21/n 1 | 4.956; 5.202; 12.04 90; 97.87; 90 | 307.48 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300635 | CIF HKL | F Fe O3 Se | P 1 21/n 1 | 4.956; 5.202; 12.04 90; 97.87; 90 | 307.48 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300636 | CIF HKL | F Fe O3 Se | P 1 21/n 1 | 4.956; 5.202; 12.04 90; 97.87; 90 | 307.48 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300637 | CIF HKL | F Fe O3 Se | P 1 21/n 1 | 4.956; 5.202; 12.04 90; 97.87; 90 | 307.48 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300638 | CIF HKL | F Fe O3 Se | P 1 21/n 1 | 4.956; 5.202; 12.04 90; 97.87; 90 | 307.48 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300639 | CIF HKL | F Fe O3 Se | P 1 21/n 1 | 4.956; 5.202; 12.04 90; 97.87; 90 | 307.48 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300640 | CIF HKL | O24 Si12 | P n m a | 20.022; 19.899; 13.383 90; 90; 90 | 5332 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300641 | CIF HKL | O24 Si12 | P n m a | 20.022; 19.899; 13.383 90; 90; 90 | 5332 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300642 | CIF HKL | O192 Si96 | P n m a | 20.022; 19.899; 13.383 90; 90; 90 | 5332 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300643 | CIF HKL | O24 Si12 | P n m a | 20.022; 19.899; 13.383 90; 90; 90 | 5332 | Wang, Yunchen; Yang, Taimin; Xu, Hongyi; Zou, Xiaodong; Wan, Wei On the quality of the continuous rotation electron diffraction data for accurate atomic structure determination of inorganic compounds Journal of Applied Crystallography, 2018, 51 |
2300644 | CIF HKL | O96 Si48 | C m c m | 18.11; 20.53; 7.528 90; 90; 90 | 2798.9 | Cichocka, Magdalena Ola; Ångström, Jonas; Wang, Bin; Zou, Xiaodong; Smeets, Stef High-throughput continuous rotation electron diffraction data acquisition <i>via</i> software automation Journal of Applied Crystallography, 2018, 51 |
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